Elpida Completes Development of 50nm Process DDR3 SDRAM

Nov 26, 2008

Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it has completed development of a 50nm process DDR3 SDRAM. The new DRAM product features the lowest power consumption in the industry, 2.5Gbps ultra high speed and a 1.2V low voltage operation based on the industry's smallest chip size.

The new 50nm process DDR3 SDRAM was developed using the industry's most advanced 193nm (ArF) immersion lithography technology and copper interconnect technology and has a chip size of less than 40mm2. Also, the new SDRAM is an eco-friendly DRAM. It operates on not only DDR3 standard 1.5V supply voltage but even lower voltages of 1.35V and 1.2V and contributes to the low-power operations of high-density memory systems such as servers and data centers.

Features of the new 50nm process DDR3 SDRAM:

-- Data rate: 800Mbps, 1066Mbps, 1333Mbps, 1600Mbps, 1866Mbps, 2133Mbps and 2500Mbps
-- Operating voltage: 1.2V, 1.35V, 1.5V
-- Low electric current: A maximum 50% reduction (IDD4) compared to 70nm process DRAM

The new DDR3 SDRAM will initially find applications in high-end desktop PCs. Applications are possible elsewhere based on the current shift away from DDR2 SDRAMs in notebook PCs and server equipment. As a leading vendor of DDR3, Elpida supplies an extensive lineup of high-speed, low-power and dependable DDR3 products. It is also accelerating the availability of a wider range of DDR3 memory applications by now providing high-performance, low-cost 50nm process products.

Mass production of the new 50nm process DDR3 SDRAM is scheduled to begin in the January-March 2009 quarter. Elpida is also aggressively developing 50nm process products for high-end digital consumer electronic products and Mobile RAM.

Source: Elpida

Explore further: Renesas announces SRAM using leading-edge 16 nm FinFET for automotive information systems

add to favorites email to friend print save as pdf

Related Stories

Elpida Begins Mass Production of 40nm 2-Gigabit DDR3 SDRAM

Dec 22, 2009

Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that its Hiroshima Plant has begun volume production of 40nm process 2-gigabit DDR3 SDRAMs. Since completing development ...

Recommended for you

Cyclist's helmet, Volvo car to communicate for safety

11 hours ago

Volvo calls it "a wearable life-saving wearable cycling tech concept." The car maker is referring to a connected car and helmet prototype that enables two-way communication between Volvo drivers and cyclists ...

California puzzles over safety of driverless cars

12 hours ago

California's Department of Motor Vehicles will miss a year-end deadline to adopt new rules for cars of the future because regulators first have to figure out how they'll know whether "driverless" vehicles ...

Britain's UKIP issues online rules after gaffes

12 hours ago

UK Independence Party (UKIP), the British anti-European Union party, has ordered a crackdown on the use of social media by supporters and members following a series of controversies.

Sony saga blends foreign intrigue, star wattage

12 hours ago

The hackers who hit Sony Pictures Entertainment days before Thanksgiving crippled the network, stole gigabytes of data and spilled into public view unreleased films and reams of private and sometimes embarrassing ...

User comments : 0

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.