Spanish scientists design a revolutionary data storage device

Nov 26, 2012
This shows the University of Granada researchers Noel Rodriguez (left) and Francisco Gamiz (right), with a CEA-LETI-based memory composed of A2RAM memory cells. Credit: University of Granada

University of Granada researchers have developed a revolutionary data storage device in collaboration with the CEA-LETI lab at Grenoble (France), an institution of the Campus of International Excellence CEI BioTic. The researchers have designed one of the most advanced data storage devices in the world. The invention is protected with ten international patents including Japan, USA, Corea and the European Union. Important companies such as Samsung and Hynix (Corea) and Micron (USA) have shown interest in this innovative data storage device.

The researchers at the University of Granada Nanoelectronics Lab Noel Rodríguez and Francisco Gámiz have designed an Advanced Random Access (A-RAM). The researchers developed the theoretical model of this new technology in 2009. The CEA-LETI lab –which has developed one of the most advanced nanoelectronic technologies in the world– have designed a device that experimentally confirms the results previously obtained in theoretical studies.

The results of this experimental validation have been published in the prestigious journal IEEE and were presented in the International Technology Conference recently celebrated in San Francisco, USA.

In the wake of the new devices and microprocessors developed by Intel (), UGR scientists are investigating alternative 3D A2RAM-based memories such as -ARAM and Trigate-ARAM patented in France and presented in the International Memory Workshop celebrated in May 2012 in Milan, Italy.

Overcoming Challenges

University of Granada researchers have demonstrated that the A-RAM and its variant A2RAM can solve the miniaturization challenges in DRAM cells –which is the type of memory that most digital devices such as computers, smartphones, tablets, etc. incorporate- long retention times, low battery consumption, and a large separation between the logic levels, which makes it immune to noise/interferences and to the variability of technological processes.

According to Francisco Gámiz "since its invention in the 60's by Robert Dennard at IBM (USA), the commands and data necessary for the proper performance of a computer are stored as zeros (no charge) and ones (charge) in DRAM (Dynamic ) cell arrays". These cell arrays are composed of a transistor and a capacitor (ó 1T-1C-DRAM). Each bit of information is stored as an electric charge in a cell consisting on a transistor and a capacitor that provides access to the charge and, consequently, to the data.

Since its development, the DRAM concept has remained unchanged. Currently, we can find DRAM cells smaller than 20nm (1 nanometer is one billionth of a meter) and DRAM memory chips of several gigabytes (one gigabyte is one billion of bites). However, the possibilities of making these cells smaller are becoming exhausted due to the minimum charge needed to clearly distinguish between the two estates of a bit (1 and 0). This is drawing the line to the minimum size of capacitors. "If we cannot further reduce the size of the capacitor, the solution is to replace it with 1T-DRAM memory cells -or one-transistor memories- that store information directly in the transistor, which simultaneously detects the estate of the cells and gives access to the information stored."

Explore further: Renesas announces SRAM using leading-edge 16 nm FinFET for automotive information systems

More information: References:

N. Rodriguez, C.Navarro, F.Gamiz, F.Andrieu, O.Faynot, S.Cristoloveanu, "Experimental demonstration of A2RAM memory cells on Silicon-On-Insulator", IEEE Electron Device Letters, Aceptado para publicación (2012)

N.Rodriguez, C.Navarro, F.Gamiz, F.Andrieou, O.Faynot, S.Cristoloveanu, "Experimental Demonstration of A2RAM Memory Cell on SOI", IEEE International SOI Conference, San Francisco, Oct.2-4, 2012

F.Gamiz, N.Rodriguez and S.Cristoloveanu, "3D Trigate 1T-DRAM memory cell for 2x nmnodes",4th International Memory Workshop, Milan, May 20-22, 2012

add to favorites email to friend print save as pdf

Related Stories

Samsung Develops First 50nm DRAM Chip

Oct 23, 2006

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has developed the industry’s first 50-nanometer (nm) DDR2 DRAM (dynamic random access memory) chip, which ...

Elpida Memory develops resistance RAM prototype

Jan 24, 2012

Elpida Memory, the world's third largest Dynamic Random Access Memory ("DRAM") manufacturer, today announced the development of its first-ever high-speed non-volatile resistance memory (ReRAM) prototype. As the ReRAM prototype ...

Recommended for you

Cyclist's helmet, Volvo car to communicate for safety

5 hours ago

Volvo calls it "a wearable life-saving wearable cycling tech concept." The car maker is referring to a connected car and helmet prototype that enables two-way communication between Volvo drivers and cyclists ...

California puzzles over safety of driverless cars

6 hours ago

California's Department of Motor Vehicles will miss a year-end deadline to adopt new rules for cars of the future because regulators first have to figure out how they'll know whether "driverless" vehicles ...

Britain's UKIP issues online rules after gaffes

6 hours ago

UK Independence Party (UKIP), the British anti-European Union party, has ordered a crackdown on the use of social media by supporters and members following a series of controversies.

Sony saga blends foreign intrigue, star wattage

6 hours ago

The hackers who hit Sony Pictures Entertainment days before Thanksgiving crippled the network, stole gigabytes of data and spilled into public view unreleased films and reams of private and sometimes embarrassing ...

User comments : 3

Adjust slider to filter visible comments by rank

Display comments: newest first

MP3Car
5 / 5 (1) Nov 26, 2012
I'm having a hard time figuring out what this "article" is really telling us, other than, "There is a group of scientists claiming to have a breakthrough in miniaturizing RAM storage, here are their names, go research it to find out more."

It looks more like a press release, "over ten international patents..." or the part, "important companies... have shown interest."
Graeme
not rated yet Nov 27, 2012
From the picture it looks as if they have something with the form factor of a vinyl LP record, perhaps storing 30 minutes of audio.
antialias_physorg
not rated yet Nov 27, 2012
I'm having a hard time figuring out what this "article" is really telling us

It's telling us that they have constructed a memory cell that uses just a transistor instead of the usual transistor-capacitor combination.

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.