News tagged with random access memory

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Ultralow power consumption for data recording

A team of researchers at Tohoku University, in collaboration with the National Institute of Advanced Industrial Science and Technology (AIST) and Hanyang University, has developed new phase change material with electrical ...

dateJan 25, 2018 in General Physics
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Researchers create magnetic RAM

MIPT researchers teamed up with collaborators for a successful demonstration of magnetoelectric random access memory (MELRAM). A transition to magnetoelectric memory could enable substantial energy savings, as well as the ...

dateAug 23, 2017 in General Physics
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