International Symposium Identifies Top Issues for sub-40 nm Immersion Litho

Oct 17, 2006

Bolstered by evidence that 193 nm immersion (193i) lithography is here to stay, semiconductor technology leaders have identified the top five critical issues for extending the breakthrough imaging process toward the 32 nm technology generation.

Meeting here recently at the 3rd International Symposium on Immersion Lithography—sponsored by Selete and SEMATECH in cooperation with IMEC—nearly 400 technologists heard presentations showing that 193i is on track for volume manufacturing at sub-65 nm half-pitch, and might be extensible below 40 nm half-pitch with techniques using high refractive index fluids and very high numerical aperture (NA).

In response, the Symposium’s steering committee established the following key challenges for utilizing 193i below 40 nm half-pitch:

1. Development of high-index lens materials
2. Identification of high-index refractive fluids
3. Availability of effective photoresists (including leaching & high index resists)
4. Cost-effective development of double exposure patterning
5. Attainment of low defectivity

“A path forward to half-pitch imaging below 40 nm has been clearly identified—but our ability to get there will depend on how much progress we make in solving these critical issues,” said Michael Lercel, SEMATECH’s Lithography director. “We’ll need to make strategic decisions on high-index materials, double patterning and double exposure to understand the ultimate extensibility of the technology into high-volume manufacturing.”

Key presentations during the Symposium focused on hyper-NA, resists, exposure tools, optical materials, process, photomasks, immersion defects, and alternative immersion fluids. More than 20 percent of submitted papers dealt with immersion defects, revealing the industry’s momentum in preparing 193i for volume manufacturing at sub-65 nm half-pitch. Interest in extending the technology below 40 nm half-pitch was demonstrated by a comparable number of submissions on high-index fluids. Also, many participants appeared convinced that 193i technology could reach and possibly exceed 1.55 NA.

The Symposium was organized by Selete and SEMATECH in cooperation with IMEC. SEMATECH will organize a fourth international Symposium, aimed at accelerating decisions related to the identified critical issues, in October 2007 in the United States.

Explore further: Renesas announces SRAM using leading-edge 16 nm FinFET for automotive information systems

add to favorites email to friend print save as pdf

Related Stories

Recommended for you

US seeks China's help after cyberattack

1 hour ago

The United States is asking China for help as it weighs potential responses to a cyberattack against Sony Pictures Entertainment that the U.S. has blamed on North Korea.

Why the Sony hack isn't big news in Japan

18 hours ago

Japan's biggest newspaper, Yomiuri Shimbun, featured a story about Sony Corp. on its website Friday. It wasn't about hacking. It was about the company's struggling tablet business.

Off-world manufacturing is a go with space printer

21 hours ago

On Friday, the BBC reported on a NASA email exchange with a space station which involved astronauts on the International Space Station using their 3-D printer to make a wrench from instructions sent up in ...

Cadillac CT6 will get streaming video mirror

23 hours ago

Cadillac said Thursday it will add high resolution streaming video to the function of a rearview mirror, so that the driver's vision and safety can be enhanced. The technology will debut on the 2016 Cadillac ...

Sony faces 4th ex-employee lawsuit over hack

23 hours ago

A former director of technology for Sony Pictures Entertainment has sued the company over the data breach that resulted in the online posting of his private financial and personal information.

User comments : 0

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.