This article has been reviewed according to Science X's editorial process and policies. Editors have highlighted the following attributes while ensuring the content's credibility:

fact-checked

peer-reviewed publication

trusted source

proofread

Researchers make breakthrough in high-pressure magnetic detection

Researchers make breakthrough in high-pressure magnetic detection
a. Schematic diagram of moissanite anvil cell and detection of magnetic samples by shallow silicon vacancy defects; b. Relationship of zero-field splitting of silicon vacancy defects with pressure; c. Magnetic phase transition detection of Nd2Fe14b materials; d. Tc-P phase diagram of YBCO superconducting material; e. Illustration of high-pressure in-situ magnetic detection based on silicon vacancy defects in silicon carbide. Credit: HFIPS

According to a study published in Nature Materials, a collaborative research team from the Hefei Institutes of Physical Science of the Chinese Academy of Sciences (CAS) and the University of Science and Technology of China has developed a research platform to study superconducting magnetic detection and magnetic phase transitions of hydrides under high pressure.

High-resolution in-situ magnetic measurement under high pressure has been a challenge. It has limited the progress of research on the Meissner effect of superconductivity and on magnetic phase transition behavior under high pressure. Using the optically detected magnetic resonance (ODMR) technique on diamond nitrogen vacancy (NV) centers has helped in-situ detection of pressure-induced magnetic phase transitions. However, it is not convenient to analyze and interpret the measured ODMR spectra because the NV center has four axial directions and zero-field splitting is temperature dependent.

In this study, the researchers have for the first time realized high-pressure in-situ quantum magnetic detection based on the silicon vacancy (VSi) defects in silicon carbide and solved the problem of high-pressure magnetic detection.

The researchers used to generate shallow VSi defects on the surface of a processed silicon carbide anvil cell. VSi defects in silicon carbide have only one axial direction. Due to the special symmetry of silicon carbide's , zero-field splitting is insensitive to temperature, thus the problem of temperature variations in high-pressure sensing can be avoided.

The researchers found that the spectrum of VSi defects shifted blue and the zero-field splitting value varied little with pressure (0.31 MHz/GPa)—much less than the slope of diamond NV centers (14.6 MHz/GPa). This is helpful for the measurement and analysis of ODMR spectra under high pressure.

By using ODMR technology on VSi defects, the researchers observed the pressure-induced magnetic phase transition of Nd2Fe14B magnets at about seven GPa, and measured the critical temperature-pressure phase diagram of the YBa2Cu3O6.6 superconductor.

This technique is of great significance to the field of high-pressure superconductivity and , according to the researchers.

By demonstrating the use of room-temperature spin- in as in-situ sensors, this work opens the door to new studies of quantum materials using Moissanite anvil cells.

More information: Xiao-Di Liu, Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide, Nature Materials (2023). DOI: 10.1038/s41563-023-01477-5. www.nature.com/articles/s41563-023-01477-5

Journal information: Nature Materials

Citation: Researchers make breakthrough in high-pressure magnetic detection (2023, March 23) retrieved 15 April 2024 from https://phys.org/news/2023-03-breakthrough-high-pressure-magnetic.html
This document is subject to copyright. Apart from any fair dealing for the purpose of private study or research, no part may be reproduced without the written permission. The content is provided for information purposes only.

Explore further

Novel quantum detection method for in-situ sensitive magnetic measurement under high pressure

229 shares

Feedback to editors