Panasonic Develops the World's First GaN Vertical Transistor

Jun 28, 2006
Panasonic Develops the World's First GaN Vertical Transistor

Panasonic today announced the development of a Gallium Nitride (GaN) transistor with vertical structure which dramatically reduces the chip size comparing with the conventional planar structure. This is the world's first demonstration of GaN vertical transistor applicable to high power switching devices.

The GaN vertical transistor features a submicron channel fabricated using novel self-aligned process. This device configuration effectively reduces the device area down to one-eighth of the conventional planar device. The submicron channel with the width of 0.3 ┬Ám serves good pinch-off characteristics that are strongly required for power switching devices.

Another feature of the vertical transistor is low on-state resistance by the reduction of contact resistance at the top electrode. Panasonic's proprietary epitaxial growth technology of InAlGaN quaternary alloy enables low contact resistance by using it as a contact layer. The InAlGaN effectively reduces the barrier height from the electrode resulting in one-third lower contact resistance than the conventional one.

In addition, the GaN vertical transistor successfully suppresses current collapse that has been commonly observed in GaN-based transistors. The current collapse is the phenomena in which drain current is reduced at high voltage operation mainly by the charges trapped at the surface. The vertical transistor has smaller surface area so that the effect of the surface trap is fully suppressed.

Applications for seventeen domestic and ten international patents have been filed. These research and development results have been presented at Device Research Conference 2006, held at Pennsylvania State University, Pennsylvania, U.S. from June 26 to 28, 2006.

Source: Matsushita Electric

Explore further: Renesas announces SRAM using leading-edge 16 nm FinFET for automotive information systems

add to favorites email to friend print save as pdf

Related Stories

Nanowires get into the groove

Aug 22, 2011

Weizmann Institute scientists have discovered that growing nanowires out, not up, can keep them in line.

Recommended for you

US seeks China's help after cyberattack

2 hours ago

The United States is asking China for help as it weighs potential responses to a cyberattack against Sony Pictures Entertainment that the U.S. has blamed on North Korea.

Why the Sony hack isn't big news in Japan

19 hours ago

Japan's biggest newspaper, Yomiuri Shimbun, featured a story about Sony Corp. on its website Friday. It wasn't about hacking. It was about the company's struggling tablet business.

Off-world manufacturing is a go with space printer

22 hours ago

On Friday, the BBC reported on a NASA email exchange with a space station which involved astronauts on the International Space Station using their 3-D printer to make a wrench from instructions sent up in ...

Cadillac CT6 will get streaming video mirror

Dec 20, 2014

Cadillac said Thursday it will add high resolution streaming video to the function of a rearview mirror, so that the driver's vision and safety can be enhanced. The technology will debut on the 2016 Cadillac ...

Sony faces 4th ex-employee lawsuit over hack

Dec 20, 2014

A former director of technology for Sony Pictures Entertainment has sued the company over the data breach that resulted in the online posting of his private financial and personal information.

User comments : 0

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.