Elpida and Spansion develop 4-Gigabit NAND flash memory

Sep 02, 2010

Elpida Memory and Spansion today announced they have created the industry's first charge-trapping 1.8 V, 4-gigabit SLC (Single Level Cell) NAND Flash memory. This NAND memory, based on Spansion's MirrorBit charge-trapping technology, is being produced at Elpida's Hiroshima factory. The advanced technical expertise and strong cooperation of the two companies has made it possible to develop and manufacture the world's first charge-trapping NAND Flash memory.

Compared to floating-gate NAND , charge-trapping NAND Flash memory is more scalable and has a simpler cell structure. It offers superior performance, faster read and faster programming speeds.

plans to combine NAND flash memory with Mobile to sell mobile consumer products, thereby providing memory solutions to the mobile market that offer high added value. In addition, Spansion is developing NAND solutions for the embedded and select wireless markets and continues to produce and sell its NOR flash memory products to its customers in the automotive, consumer, communications, industrial and select wireless market segments.

Elpida plans to start shipping samples of the 1.8 V 4-gigabit NAND flash memory during the fourth quarter of 2010, will begin during the first quarter of 2011, and is developing 2-gigabit and 1-gigabit density products in addition to its 4-gigabit products. Spansion will ship samples in the first quarter of 2011 and will begin production in the second quarter of 2011. Both companies are also developing 3.0 V products and plan to develop 1-gigabit, 2-gigabit, and 4-gigabit products.

Explore further: Samsung mass produces industry's first 8-gigabit DDR4 based on 20 nanometer process technology

add to favorites email to friend print save as pdf

Related Stories

Samsung Produces 60-Nanometer 8-Gigabit NAND Flash Memory

Jul 19, 2006

Samsung Electronics today announced that it has begun mass producing an 8-Gigabit (Gb) NAND flash memory device, providing a much larger and more affordable storage density for consumer and mobile applications ...

Toshiba to launch 32nm process NAND flash memory

Apr 27, 2009

Toshiba Corporation today announced that it will start shipping NAND flash memory products fabricated with 32nm process technology. Samples of the world's first 32nm generation, 32-gigabit (Gb) single chips (4 gigabytes (GB)), ...

Recommended for you

Tablets, cars drive AT&T wireless gains—not phones

7 hours ago

AT&T says it gained 2 million wireless subscribers in the latest quarter, but most were from non-phone services such as tablets and Internet-connected cars. The company is facing pricing pressure from smaller rivals T-Mobile ...

Twitter looks to weave into more mobile apps

7 hours ago

Twitter on Wednesday set out to weave itself into mobile applications with a free "Fabric" platform to help developers build better programs and make more money.

Blink, point, solve an equation: Introducing PhotoMath

8 hours ago

"Ma, can I go now? My phone did my homework." PhotoMath, from the software development company MicroBlink, will make the student's phone do math homework. Just point the camera towards the mathematical expression, ...

Google unveils app for managing Gmail inboxes

8 hours ago

Google is introducing an application designed to make it easier for its Gmail users to find and manage important information that can often become buried in their inboxes.

User comments : 0