Panasonic Develops High Power Gallium Nitride Transistor for Long-distance Millimeter-Wave Communication

Jul 23, 2010

Panasonic today announced the development of a high power Gallium Nitride (GaN) transistor for long-distance communication at millimeter-wave frequencies. A 25GHz wireless transceiver is fabricated using the GaN transistor. The device exhibits maximum output power of 10.7W at 25GHz enabling communication over 84km in theory.

The high power GaN transistor is fabricated on silicon (Si) substrate which is suited for mass production taking advantages of the large diameter. A novel epitaxial structure on Si improves the crystal quality resulting in high drain current of 1.1A/mm with the high carrier concentration.

A metal-insulator-semiconductor (MIS) gate structure with crystalline SiN film used as a gate greatly increases the gate and thus high drain voltage of 55V can be applied for the device. The Panasonic's proprietary GaN device with high current and high breakdown voltage enables high power operation of 10.7W at 25GHz which is the highest power reported by GaN on Si at the frequency. The device also exhibits the world highest of 2.4W/mm at 60GHz among reported GaN transistors.

The fabricated transceiver utilizes orthogonal frequency division multiplexing (OFDM) which is suited for high capacity data communication. The averaged output power of 2W out of the 10W from the GaN transistor can achieve 84km communication in theory. The high power GaN transistor enables far longer distance than that by conventional GaAs transistors. The presented GaN transistor is very promising for future millimeter-wave long-distance communication systems with high speed and high data capacity.

Applications for 18 domestic and 3 overseas patents have been filed.

Explore further: Renesas announces SRAM using leading-edge 16 nm FinFET for automotive information systems

add to favorites email to friend print save as pdf

Related Stories

Gallium Nitride Power Transistor for Wireless Base Stations

Jan 12, 2005

According to JCN Network, Oki Electric has announced that it has started sample provisioning of it's Gallium Nitride High Electron Mobility Transistor (GaN-HEMT), a high frequency wave power transistor for wireless base stations. The new transistor, using gallium nitride ma ...

Recommended for you

Cyclist's helmet, Volvo car to communicate for safety

8 hours ago

Volvo calls it "a wearable life-saving wearable cycling tech concept." The car maker is referring to a connected car and helmet prototype that enables two-way communication between Volvo drivers and cyclists ...

California puzzles over safety of driverless cars

9 hours ago

California's Department of Motor Vehicles will miss a year-end deadline to adopt new rules for cars of the future because regulators first have to figure out how they'll know whether "driverless" vehicles ...

Britain's UKIP issues online rules after gaffes

9 hours ago

UK Independence Party (UKIP), the British anti-European Union party, has ordered a crackdown on the use of social media by supporters and members following a series of controversies.

Sony saga blends foreign intrigue, star wattage

9 hours ago

The hackers who hit Sony Pictures Entertainment days before Thanksgiving crippled the network, stole gigabytes of data and spilled into public view unreleased films and reams of private and sometimes embarrassing ...

User comments : 0

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.