Toshiba to launch 32nm process NAND flash memory

Apr 27, 2009

Toshiba Corporation today announced that it will start shipping NAND flash memory products fabricated with 32nm process technology. Samples of the world's first 32nm generation, 32-gigabit (Gb) single chips (4 gigabytes (GB)), offering the largest density of any NAND flash chip, are available from today, and 16Gb chip (2GB) products, the current mainstream density, will be available in July in Japan. The 32Gb chips will first be applied to memory cards and USB memories and subsequently extended to embedded products.

Toshiba is leading the industry in applying 43nm process technology to 32GB products, which stack eight 32Gb . Application of the advanced 32nm process technology will further shrink chip size, allowing Toshiba to boost productivity and bring further enhancements to high density, small sized products.

As more mobile phones and mobile equipment provide support for video and movies, demand for larger density, small sized memory products is growing stronger.

Toshiba will start mass production of 32Gb NAND flash memories in July 2009, two months ahead of its original plan. 16Gb products will start to ship from the third quarter of 2009 (October to December 2009). The new chips will be produced at Toshiba's Yokkaichi Operations, in Mie prefecture, Japan.

By accelerating process migration and integrating multi level cell technologies, and through continued advances in productivity, Toshiba intends to enhance its competitiveness in the memory business.

Source:

Explore further: Nintendo reports loss on shaky Wii U sales

add to favorites email to friend print save as pdf

Related Stories

Toshiba to launch 43nm SLC NAND flash memory

Oct 28, 2008

Toshiba today announced the launch of a new line-up of 43nm single-level cell (SLC) NAND flash memory products available in densities ranging from 512Mbits to 64 gigabits (Gb) and in a total of 16 versions.

SanDisk, Toshiba Develop 32-nanometer NAND Flash Technology

Feb 11, 2009

SanDisk and Toshiba today announced the co-development of multi-level cell (MLC) NAND flash memory using 32-nanometer process technology to produce a 32-gigabit (Gb) 3-bits-per-cell (X3) memory chip. The breakthrough ...

Toshiba Takes NAND Flash Memory to 4Gb Level

Apr 14, 2004

Toshiba America Electronic Components, Inc. (TAEC)*, and its parent Toshiba Corp. (Toshiba), reinforcing the company's leadership in the development and fabrication of powerful, high capacity NAND flash memory, today introduced ...

Recommended for you

US spy agency patents car seat for kids

1 hour ago

Electronic eavesdropping is the National Security Agency's forte, but it seems it also has a special interest in children's car seats, Foreign Policy magazine reported Wednesday.

Students' autonomous robot project could be a lifesaver

3 hours ago

The building is on fire but the firefighters are unsure about what's fueling it or how hazardous the situation is. They place a robot at the entrance and program in a rudimentary set of directions using a ...

Country Web domains can't be seized: regulator

3 hours ago

The Internet's regulatory authority said Wednesday that country-specific Web domains cannot be seized in court proceedings, as it sought to quash an effort to recover assets in terrorism-related lawsuits.

User comments : 0