(PhysOrg.com) -- Lyric Semiconductor has unveiled a new type of chip that uses probability inputs and outputs instead of the conventional 1's and 0's used in logic chips today. Crunching probabilities is much more applicable ...
Intel and Micron Technology on Tuesday unveiled what they touted as a new kind of memory chip that could "revolutionize" computing devices, services and applications.
Hardware
Jul 28, 2015
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(PhysOrg.com) -- Although today flash memory is primarily used as a removable storage medium, it's currently becoming more and more appealing for a wider variety of applications. Moving beyond memory cards and flash drives, ...
(PhysOrg.com) -- Samsung Electronics has announced two new flash chip storage devices for mobiles: a removable 32-Gbyte micro SD (secure digital) card and a 64-Gbyte moviNAND flash memory module. Both are based on Samsung's ...
SanDisk announced it has begun production shipments of flash memory cards based on the company's advanced X4 flash memory technology. This innovative new technology holds four bits of data in each memory cell, twice as many ...
Hardware
Oct 16, 2009
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0
Intel and Micron Technology today introduced a new, finer 20-nanometer (nm) process technology for manufacturing NAND flash memory. The new 20nm process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND flash device, ...
Electronics & Semiconductors
Apr 15, 2011
11
0
(PhysOrg.com) -- Toshiba announced today the first ever 128GB embedded flash memory chip using 32 nanometer processes. The entire design is less than 0.06 inches thick.
Intel is moving to a more advanced, 34- nanometer manufacturing process for its NAND flash-based Solid State Drive (SSD) products, which are an alternative to a computer's hard drive. The move to 34nm will help lower prices ...
Hardware
Jul 21, 2009
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Toshiba Corporation today announced the launch of a 64 gigabyte (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry.
Electronics & Semiconductors
Dec 15, 2009
1
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SanDisk and Toshiba today announced the co-development of multi-level cell (MLC) NAND flash memory using 32-nanometer process technology to produce a 32-gigabit (Gb) 3-bits-per-cell (X3) memory chip. The breakthrough introduction ...
Nanophysics
Feb 11, 2009
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