Samsung Develops Most Advanced Green DDR3 DRAM, Using 30nm-class Technology

Feb 01, 2010

Samsung Electronics today announced that the industry’s first 30-nanometer-class DRAM has just successfully completed customer evaluations, in two gigabit (Gb) densities. With DDR3 SDRAM becoming the predominant main memory this quarter, Samsung’s aggressive advancement in process technology will raise productivity and expedite dissemination of high performance, 1.5V and 1.35V DDR3 for servers, desktops and notebook PCs.

“Our accelerated development of next generation 30nm-class should keep us in the most competitive position in the memory market,” said Soo-In Cho, president, Memory Division, .

He added, “Our 30nm-class process technology will provide the most advanced low-power DDR3 available today and therein the most efficient DRAM solutions anywhere for the introduction of consumer electronics devices and server systems.”

The 30nm-class process when applied to DDR3 mass production raises productivity by 60 percent over 40nm-class DDR3. This will result in a doubling of production cost-efficiency compared to DRAM produced using 50nm to 60nm-class technology.

The 30nm-class 2Gb, Green DRAM reduces by up to 30 percent over 50nm-class DRAM. A 4-Gigabyte (GB), 30nm module when used in a new-generation notebook will consume only three watts per hour, which is just three percent of the total power usage of a notebook.

The new DDR3 will be used in a broader range of products, from servers to notebooks, desktops, and future versions of netbooks and mobile devices.

The 30nm-class DDR3 is scheduled for mass production in the second half of this year.

Explore further: New oscillator for low-power implantable transcievers

More information: For more information about Samsung Green DDR3, visit www.SamsungDDR3.com

add to favorites email to friend print save as pdf

Related Stories

Elpida Completes Development of 50nm Process DDR3 SDRAM

Nov 26, 2008

Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it has completed development of a 50nm process DDR3 SDRAM. The new DRAM product features the lowest power consumption ...

Elpida Begins Mass Production of 40nm 2-Gigabit DDR3 SDRAM

Dec 22, 2009

Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that its Hiroshima Plant has begun volume production of 40nm process 2-gigabit DDR3 SDRAMs. Since completing development ...

Recommended for you

US official: Auto safety agency under review

10 hours ago

Transportation officials are reviewing the "safety culture" of the U.S. agency that oversees auto recalls, a senior Obama administration official said Friday. The National Highway Traffic Safety Administration has been criticized ...

Out-of-patience investors sell off Amazon

10 hours ago

Amazon has long acted like an ideal customer on its own website: a freewheeling big spender with no worries about balancing a checkbook. Investors confident in founder and CEO Jeff Bezos' invest-and-expand ...

Ebola.com domain sold for big payout

10 hours ago

The owners of the website Ebola.com have scored a big payday with the outbreak of the epidemic, selling the domain for more than $200,000 in cash and stock.

Hacker gets prison for cyberattack stealing $9.4M

14 hours ago

An Estonian man who pleaded guilty to orchestrating a 2008 cyberattack on a credit card processing company that enabled hackers to steal $9.4 million has been sentenced to 11 years in prison by a federal judge in Atlanta.

Magic Leap moves beyond older lines of VR

15 hours ago

Two messages from Magic Leap: Most of us know that a world with dragons and unicorns, elves and fairies is just a better world. The other message: Technology can be mindboggingly awesome. When the two ...

User comments : 0