Samsung announces production of 2GB LPDDR3 mobile memory, using 30nm-class technology

September 18, 2012

Samsung Electronics has begun mass producing the industry's first two gigabyte (GB), low power double-data-rate 3 (LPDDR3) memory, using 30 nanometer class technology, for next-generation mobile devices.

Samsung started of the industry's most advanced mobile DRAM (dynamic ) chip only ten months after it began producing the industry's first 30nm-class based 2GB LPDDR2 memory in October, 2011. The new LPDDR3, which marks the first time a 2GB LPDDR3 density is available in one space-saving package, utilizes four LPDDR3 chips stacked together. LPDDR3 is needed for fast processors, high resolution displays and 3D graphics in tablets and smartphones.

"We will embrace greater technical cooperation with industry leading mobile device makers, as we continue to provide timely next-generation memory solutions like 2GB LPDDR3 DRAM, in helping to accelerate growth of the mobile memory market," said Wanhoon Hong, executive vice president, Memory Sales & Marketing, . "Furthermore, with this rapid introduction of 2GB LPDDR3, we are moving very assertively to expand our global leadership on the premium side of our extensive memory portfolio."

The new 2GB LPDDR3 DRAM can transfer data at up to 1600 megabits per second (Mbps) per pin, which is approximately 50 percent faster than a LPDDR2 DRAM. And on the package level, it provides a data transmission rate up to 12.8 gigabytes per second (GB/s), which will enable playing of full HD video content in real-time on smartphones and tablets. The high data transfer rates allows LPDDR3 to exceed support for full HD video payback on screens exceeding the current market available four-inch measurement and enable real-time viewing without downloading the content for the full HD visual experience.

By providing an early extensive global supply of LPDDR3 DRAM to smartphone and tablet manufacturers, Samsung expects to see a significant increase in the adoption of 2GB mobile DRAM.

Explore further: Samsung Now Mass Producing First 90nm 512Mb Mobile DRAM

Related Stories

Samsung Now Mass Producing First 90nm 512Mb Mobile DRAM

November 14, 2005

Samsung Electronics announced that it has started to mass produce 512Mb DRAM (dynamic random access memory) for mobile products, using 90nm circuitry. This marks the first time that 512Mb mobile DRAM will be available anywhere ...

Elpida develops 1600 Mbps 4-gigabit DDR3 mobile RAM (LPDDR3)

November 24, 2011

Elpida Memory, Dynamic Random Access Memory ("DRAM") manufacturer, today announced that it has developed an advanced 30nm process 4-gigabit DDR3 Mobile RAMTM (LPDDR3). The new chip can achieve a high-speed data transfer rate ...

Recommended for you

The ethics of robot love

November 25, 2015

There was to have been a conference in Malaysia last week called Love and Sex with Robots but it was cancelled. Malaysian police branded it "illegal" and "ridiculous". "There is nothing scientific about sex with robots," ...


Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.