Fujitsu launches new SPI FRAMs in 0.18µm technology

Jun 30, 2011

Fujitsu Semiconductor Europe is sampling customers with the new SPI FRAMs based on its 0.18µm technology. With this step, Fujitsu approaches the end of the migration process from 0.35 to 0.18µm technology achieving the industry-leading FRAM performance with E2PROM compatible package.

FRAM (Ferroelectric Random Access Memory) combines the advantages of fast writing SRAM with non-volatile Flash into one device. The new SPI FRAM family MB85RSxxx incorporates 3 devices: MB85RS256A, MB85RS128A and MB85RS64A, which represent 3 density levels of 256Kbit, 128Kbit and 64Kbit respectively. All devices operate at a voltage range between 3.0 and 3.6V and provide an endurance of 10 billion write/read cycles as well as data retention of 10 years at 55°C. Operating frequency has been significantly increased to a maximum of 25MHz, and since FRAM products render voltage boosters unnecessary for the writing process, they are well-suited for low power applications. The products are offered in 8-pin plastic SOP packages with standard memory pin assignment, which are fully compatible with E2PROM devices.

With in-house development and manufacturing, is able to optimise the closest co-operation between design and factory. This builds up the basis of a substantial and high-quality product to be offered to the market with a stable supply chain.

Besides the SPI FRAM family, Fujitsu offers FRAM standalone devices with I²C as well as parallel interfaces. Density levels vary from 16Kbit to 4Mbit. Fujitsu intends expansion of its FRAM portfolio to meet market requirements.

FRAM standalone memory devices are widely used in metering, factory automation applications as well as various industrial segments, where data logging, high speed write access and high endurance is essential. FRAM can ideally replace all battery back-up solutions and enable an environment-friendly product for its customers.

Explore further: ARM set to improve battery life for Internet of Things devices

Related Stories

Fujitsu Develops New NOR Flash Memory Macro

Mar 24, 2010

Fujitsu Microelectronics today announced the development of new flash memory macro that enables NOR flash memory circuits to achieve high-speed read operations while operating at low power currents.

Recommended for you

How to alert drivers to fatigue

43 minutes ago

Frank Black is a professional truck driver, having clocked up nearly three decades travelling the breadth of Australia. But every time he gets into his cab, Black thinks about driver fatigue; over the years ...

Protecting our rights to privacy and digital dignity

55 minutes ago

How many of us read the terms and conditions when signing up to a social media account or downloading a new app? And does agreeing to these rules offer us any real protection from big business looking to ...

Energy-tracking app encourages sustainable behaviors

1 hour ago

For a generation motivated by technology and fast-moving information, a professor at the University of Wisconsin-Madison has created an energy-tracking app to make reducing day-to-day energy usage more accessible.

Google big Android Wear update adds functions, fun

3 hours ago

Android Wear's Monday announcement of new features is drawing many compliments from those watching out for what's next in making a smartwatch purchase. The new attractions include the lightness of wearing ...

User comments : 0

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.