Fujitsu launches new SPI FRAMs in 0.18µm technology

Jun 30, 2011

Fujitsu Semiconductor Europe is sampling customers with the new SPI FRAMs based on its 0.18µm technology. With this step, Fujitsu approaches the end of the migration process from 0.35 to 0.18µm technology achieving the industry-leading FRAM performance with E2PROM compatible package.

FRAM (Ferroelectric Random Access Memory) combines the advantages of fast writing SRAM with non-volatile Flash into one device. The new SPI FRAM family MB85RSxxx incorporates 3 devices: MB85RS256A, MB85RS128A and MB85RS64A, which represent 3 density levels of 256Kbit, 128Kbit and 64Kbit respectively. All devices operate at a voltage range between 3.0 and 3.6V and provide an endurance of 10 billion write/read cycles as well as data retention of 10 years at 55°C. Operating frequency has been significantly increased to a maximum of 25MHz, and since FRAM products render voltage boosters unnecessary for the writing process, they are well-suited for low power applications. The products are offered in 8-pin plastic SOP packages with standard memory pin assignment, which are fully compatible with E2PROM devices.

With in-house development and manufacturing, is able to optimise the closest co-operation between design and factory. This builds up the basis of a substantial and high-quality product to be offered to the market with a stable supply chain.

Besides the SPI FRAM family, Fujitsu offers FRAM standalone devices with I²C as well as parallel interfaces. Density levels vary from 16Kbit to 4Mbit. Fujitsu intends expansion of its FRAM portfolio to meet market requirements.

FRAM standalone memory devices are widely used in metering, factory automation applications as well as various industrial segments, where data logging, high speed write access and high endurance is essential. FRAM can ideally replace all battery back-up solutions and enable an environment-friendly product for its customers.

Explore further: MediaTek SoC to boost 64-bit Android devices

add to favorites email to friend print save as pdf

Related Stories

Fujitsu Develops New NOR Flash Memory Macro

Mar 24, 2010

Fujitsu Microelectronics today announced the development of new flash memory macro that enables NOR flash memory circuits to achieve high-speed read operations while operating at low power currents.

Recommended for you

Apple's fiscal 3Q earnings top analyst forecasts

2 hours ago

Apple's growth prospects are looking brighter as anticipation builds for the upcoming release of the next iPhone, a model that is expected to cater to consumers yearning for a bigger screen.

Putin signs law seen as crimping social media

4 hours ago

President Vladimir Putin on Tuesday signed a law requiring Internet companies to store all personal data of Russian users at data centres in Russia, a move which could chill criticism on foreign social networking ...

User comments : 0