Fujitsu Semiconductor aims to start production of GaN power devices

Fujitsu Semiconductor today announced that it successfully achieved high output power of 2.5kW in server power supply units equipped with gallium-nitride (GaN) power devices built on a silicon substrate. Fujitsu Semiconductor ...

Semiconductor devices: Under mounting stress

The recently developed ability to measure physical changes in silicon when processed into microelectronic devices could improve fabrication techniques for even smaller circuits.

In static friction, chemistry is key to stronger bonds

(Phys.org)—Inspired by phenomena common to both earthquakes and atomic force microscopy, University of Wisconsin–Madison materials engineers have learned that chemical reactions between two silicon dioxide surfaces cause ...

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