A device emerges from the fusion of IGZO and ferroelectric-HfO2

As a part of JST PRESTO program, Associate professor Masaharu Kobayashi, Institute of Industrial Science, the University of Tokyo, has developed a ferroelectric FET (FeFET) with ferroelectric-HfO2 and ultrathin IGZO channel. ...

Remaining switched on to silicon-based electronics

The difficulty of further increasing the power conversion efficiency of silicon-based components in power electronics seems to indicate that we are reaching the limits of potential advances to this technology. However, a ...

New coating could have big implications for lithium batteries

Building a better lithium-ion battery involves addressing a myriad of factors simultaneously, from keeping the battery's cathode electrically and ionically conductive to making sure that the battery stays safe after many ...

Some piezoelectric materials may be 'fakes'

Piezoresponse force microscopy (PFM) is the most widespread technique for characterising piezoelectric properties at the nanoscale, i.e., for determining the ability of some materials to generate electricity when subjected ...

How to ice-proof the next generation of aircraft

35,000 feet is standard cruising altitude for a commercial jet airplane, but at those lofty heights the air temperature plummets below -51 degrees Celsius and ice can easily form on wings. To prevent ice formation and subsequent ...

page 1 from 22