(PhysOrg.com) -- Samsung Electronics has announced two new flash chip storage devices for mobiles: a removable 32-Gbyte micro SD (secure digital) card and a 64-Gbyte moviNAND flash memory module. Both are based on Samsung's ...
Toshiba Corporation today announced the launch of a 64 gigabyte (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry.
Electronics & Semiconductors
Dec 15, 2009
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Samsung Electronics announced today that it has developed the world's thinnest multi-die package, one that measures a mere 0.6mm in height. Designed initially for 32 gigabyte (GB) densities, the new memory package is just ...
Electronics & Semiconductors
Nov 5, 2009
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SanDisk announced it has begun production shipments of flash memory cards based on the company's advanced X4 flash memory technology. This innovative new technology holds four bits of data in each memory cell, twice as many ...
Hardware
Oct 16, 2009
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Intel Corporation and Micron Technology today announced the development of a new 3-bit-per-cell (3bpc) multi-level cell (MLC) NAND technology, leveraging their award-winning 34-nanometer NAND process. The chips are typically ...
Electronics & Semiconductors
Aug 11, 2009
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Intel is moving to a more advanced, 34- nanometer manufacturing process for its NAND flash-based Solid State Drive (SSD) products, which are an alternative to a computer's hard drive. The move to 34nm will help lower prices ...
Hardware
Jul 21, 2009
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Toshiba Corporation today announced that it will start shipping NAND flash memory products fabricated with 32nm process technology. Samples of the world's first 32nm generation, 32-gigabit (Gb) single chips (4 gigabytes (GB)), ...
Electronics & Semiconductors
Apr 27, 2009
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SanDisk and Toshiba today announced the co-development of multi-level cell (MLC) NAND flash memory using 32-nanometer process technology to produce a 32-gigabit (Gb) 3-bits-per-cell (X3) memory chip. The breakthrough introduction ...
Nanophysics
Feb 11, 2009
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