At today's 2011 IEEE International Electron Devices Meeting (IEDM), imec presents the world’s smallest, fully-functional HfO2-based Resistive RAM (RRAM) cell, with an area of less than 10x10nm². The new cell shows ...
Electronics & Semiconductors
Dec 8, 2011
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Institute for Solid State Physics, the University of Tokyo and RIKEN announced that researchers from both institutes succeeded in the magnetic control of anomalous Hall effect (AHE) induced by spin chirality. Details were ...
General Physics
Jun 29, 2011
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(PhysOrg.com) -- Tomorrow's nonvolatile memory devices – computer memory that can retain stored information even when not powered – will profoundly change electronics, and Cornell University researchers have discovered ...
General Physics
Mar 9, 2011
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A fundamental component of a field-effect transistor (FET) is the gate dielectric, which determines the number of charge carriers -- electrons or electron vacancies -- that can be injected into the active channel of the device. ...
Nanophysics
Feb 24, 2011
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(PhysOrg.com) -- Researchers from North Carolina State University have developed a new device that represents a significant advance for computer memory, making large-scale "server farms" more energy efficient and allowing ...
Electronics & Semiconductors
Jan 20, 2011
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Imagine building cheaper electronics on a variety of substrates -- materials like plastic, paper, or fabric. Researchers at Taiwan's National Chiao Tung University have made a discovery that opens this door, allowing them ...
Nanomaterials
Jul 27, 2010
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(PhysOrg.com) -- The ability to store and retrieve data is an important component of today's computers, as well as other modern electronic devices such as cell phones, video game consoles, and camcorders. Since their invention ...
Advances by the Rice University lab of James Tour have brought graphite's potential as a mass data storage medium a step closer to reality and created the potential for reprogrammable gate arrays that could bring about a ...
Nanophysics
Sep 9, 2009
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