(PhysOrg.com) -- German scientists from the Forschungszentrum Julich and the Max Planck Institute of Microstructure Physics in Halle have discovered the basis for the next generation of memory devices. In a ferroelectric ...
General Physics
Mar 29, 2011
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RIKEN and the National Institute for Materials Science (NIMS) have succeeded in forming a skyrmion crystal in which electron spin is aligned in a vortex shape in a microdevice using the helimagnet FeGe. The skyrmion crystal ...
Condensed Matter
Aug 27, 2012
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Slanted exterior edges on tiny magnetic disks could lead to a breakthrough in data processing. Materials researchers of the Helmholtz-Zentrum Dresden-Rossendorf, Germany, were able to create magnetic vortices with a diameter ...
Condensed Matter
Mar 14, 2011
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Elpida Memory today announced it had completed development of the industry's first 25-nanometer (nm) process 4-gigabit DDR3 SDRAM. The new chip is also the smallest 4-gigabit DRAM. The new cutting-edge smallest available ...
Electronics & Semiconductors
Sep 23, 2011
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(Phys.org) —Resistive memory cells (ReRAM) are regarded as a promising solution for future generations of computer memories. They will dramatically reduce the energy consumption of modern IT systems while significantly ...
Nanophysics
Apr 24, 2013
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RIKEN, the University of Tokyo, and the National Institute for Materials Science (NIMS; President: Sukekatsu Ushioda) succeeded for the first time in generating and visualizing electron spin vortex state "skyrmion molecules" ...
General Physics
Feb 25, 2014
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Scientists have recently started to explore the possibility of using an intrinsic property of the electron known as spin for processing and storing information. Magnetic fields can influence the dynamics of electron spin, ...
Condensed Matter
Aug 28, 2013
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The integration of electronics into textiles is a burgeoning field of research that may soon enable smart fabrics and wearable electronics. Bringing this technology one step closer to fruition, Jin-Woo Han and Meyya Meyyappan ...
Nanomaterials
Sep 26, 2011
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A research team, led by Professor Tetsuo Endoh at Tohoku University, has successfully developed 128Mb-density spin-transfer torque magnetoresistive random access memory (STT-MRAM) with a write speed of 14 ns for use in embedded ...
Hardware
Dec 28, 2018
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(Phys.org) -- When searching for the technology to boost computer speeds and improve memory density, the best things come in the smallest packages.
Nanomaterials
Jun 11, 2012
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