(PhysOrg.com) -- For the first time, scientists at IBM Research have demonstrated that a relatively new memory technology, known as phase-change memory (PCM), can reliably store multiple data bits per cell over extended periods ...
Electronics & Semiconductors
Jun 30, 2011
1
0
(PhysOrg.com) -- University of Maryland researchers have discovered a way to control magnetic properties of graphene that could lead to powerful new applications in magnetic storage and magnetic random access memory.
Nanophysics
Apr 14, 2011
16
0
A new, environmentally-friendly electronic alloy consisting of 50 aluminum atoms bound to 50 atoms of antimony may be promising for building next-generation "phase-change" memory devices, which may be the data-storage technology ...
Electronics & Semiconductors
Sep 13, 2013
2
0
Toshiba Corporation today introduced a new line up of 1.8-inch HDDs with a maximum capacity of 320GB, the highest yet announced by the industry, targeted at thin and light mobile PCs and portable external hard disk drives. ...
Hardware
Nov 5, 2009
0
0
Intel Corp. and Numonyx today announced a key breakthrough in the research of phase change memory (PCM), a new non-volatile memory technology that combines many of the benefits of today's various memory types.
Electronics & Semiconductors
Oct 29, 2009
4
0
Memory based on electrically-induced "resistive switching" effects have generated a great deal of interest among engineers searching for faster and smaller devices because resistive switching would allow for a higher memory ...
Nanophysics
Sep 20, 2013
2
0
Elpida Memory, the third largest Dynamic Random Access Memory (DRAM) manufacturer in the world, today announced that it had developed the industry's first 4-gigabit next-generation mobile memory chips for smart phones, tablet ...
Electronics & Semiconductors
Nov 18, 2011
0
0
Solid-state memory is seeing an increase in demand due to the emergence of portable devices such as tablet computers and smart phones. Spin-transfer torque magnetoresistive random-access memory (STT-MRAM) is a new type of ...
General Physics
Feb 2, 2012
1
0
Toyohashi Tech researchers have fabricated Hall effect magnetic field sensors operable at least 400 C and in extreme radiation conditions using gallium nitride-based heterostructures a with two-dimensional electron gas.
General Physics
Mar 22, 2012
0
0
The University of Twente--Enschede, The Netherlands published newly conferred PhD Mohammed Ghiath Khatib's thesis, "MEMS-based Storage Devices: Integration in Energy-Constrained Mobile System". The new MEMS, (Micro-Electro-Mechanical ...
