A room-temperature bonding technique for integrating wide bandgap materials such as gallium nitride (GaN) with thermally-conducting materials such as diamond could boost the cooling effect on GaN devices and facilitate better ...
Materials Science
Mar 12, 2020
0
18
JST announces the successful development of a high-quality bulk GaN growth device based on the THVPE method, a development topic of the Newly extended Technology transfer Program (NexTEP). Development towards commercial applicability ...
Materials Science
Dec 3, 2019
0
10
A research collaboration between Lawrence Berkeley National Laboratory (Berkeley Lab), Pacific Northwest National Laboratory (PNNL), Brown University, and NVIDIA has achieved exaflop performance on the Summit supercomputer ...
General Physics
Nov 13, 2019
0
7
Gallium nitride, a semiconductor that revolutionized energy-efficient LED lighting, could also transform electronics and wireless communication, thanks to a discovery made by Cornell researchers.
Condensed Matter
Sep 26, 2019
0
394
Gallium nitride (GaN) is a material often used to build semiconductor power devices and light emitting diodes (LEDs). In the past, researchers have explored the possibility of realizing GaN p-channel transistors, which could ...
In Gallium Nitride (GaN) implanted with a small amount of magnesium (Mg), NIMS succeeded for the first time in visualizing the distribution and optical behavior of implanted Mg at the nanoscale which may help in improving ...
Nanomaterials
Jul 9, 2019
0
0
Chemists from the University of Bonn and their U.S. colleagues at Columbia University in New York have discovered a novel mechanism in catalysis that allows the cheap, environmentally friendly synthesis of certain alcohols. ...
Materials Science
May 24, 2019
0
88
A team of Fraunhofer researchers has succeeded in significantly enhancing the functionality of GaN power ICs for voltage converters: the researchers at Fraunhofer IAF integrated current and temperature sensors onto a GaN-based ...
Electronics & Semiconductors
May 6, 2019
0
8
Volkmar Dierolf and an international team demonstrate the possibility of tuning the color of a GaN LED by changing the time sequence at which the operation current is provided to the device.
Optics & Photonics
Apr 29, 2019
3
170
As silicon-based semiconductors reach their performance limits, gallium nitride (GaN) is becoming the next go-to material to advance light-emitting diode (LED) technologies, high-frequency transistors and photovoltaic devices. ...
Condensed Matter
Jun 29, 2018
0
95
