Gallium nitride (GaN) is a material often used to build semiconductor power devices and light emitting diodes (LEDs). In the past, researchers have explored the possibility of realizing GaN p-channel transistors, which could ...
Gallium nitride, a semiconductor that revolutionized energy-efficient LED lighting, could also transform electronics and wireless communication, thanks to a discovery made by Cornell researchers.
Condensed Matter
Sep 26, 2019
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394
An exotic material called gallium nitride (GaN) is poised to become the next semiconductor for power electronics, enabling much higher efficiency than silicon.
Electronics & Semiconductors
Jul 29, 2015
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3016
Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a girl's best friend. Their groundbreaking research focuses on gallium nitride (GaN) transistors, which are high-power, high-frequency ...
Nanomaterials
Dec 21, 2023
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30
Ultraviolet (UV) light detection can revolutionize industries such as civil engineering, military defense, aerospace exploration, and medical research. The future of electronics relies heavily on energy-efficient devices ...
Optics & Photonics
Apr 18, 2023
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88
Accurately modeling extreme precipitation events remains a major challenge for climate models. These models predict how the earth's climate may change over the course of decades and even centuries. To improve them especially ...
Earth Sciences
Oct 4, 2022
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39
Gallium nitride (GaN) is a semiconductor material whose wide band gap may one day lead to it superseding silicon in electronics applications. It is therefore important to have GaN characterization techniques that are able ...
Analytical Chemistry
Apr 26, 2021
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34
Gallium nitride crystals are a promising material for the development of next-generation power semiconductor devices. NIMS and the Tokyo Tech developed a technique for growing high-quality GaN crystals with considerably fewer ...
Analytical Chemistry
Dec 23, 2020
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659
The key to efficiently harvesting energy from sunlight could be to find the right combinations of light-capturing materials. Researchers at KAUST have discovered that a form of iron oxide makes an excellent co-catalyst for ...
Materials Science
Sep 2, 2020
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18
A room-temperature bonding technique for integrating wide bandgap materials such as gallium nitride (GaN) with thermally-conducting materials such as diamond could boost the cooling effect on GaN devices and facilitate better ...
Materials Science
Mar 12, 2020
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18
