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(Phys.org) -- Researchers sponsored by Semiconductor Research Corporation (SRC) announced that they have successfully created contact hole patterns for a wide variety of practical logic and memory devices using a next-generation ...
Electronics & Semiconductors
May 24, 2012
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Samsung Electronics today announced that it has started the industry's first production of a high-performance toggle DDR 2.0 multi-level-cell (MLC) memory chip. The new NAND flash chip features a 64 gigabit (Gb) density, ...
Electronics & Semiconductors
May 13, 2011
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As electronic components become smaller, understanding how materials behave at the nanoscale is crucial for the development of next-generation electronics. Unfortunately, it is very difficult to predict what happens when ...
General Physics
Dec 27, 2017
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Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory, today announced that it had completed development of a high-density, high-speed, low-power consumption 50nm process 2-gigabit GDDR5 using copper ...
Electronics & Semiconductors
Jun 25, 2010
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As electronic devices become smaller and more sophisticated, the search for compact nonvolatile memory becomes increasingly important. However, conventional silicon technologies, such as complementary metal-oxide-semiconductor ...
Electronics & Semiconductors
Dec 23, 2011
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Micron Technology today announced that it is now sampling a monolithic 2-gigabit (Gb) low-power DDR2 (LPDDR2) memory device designed to provide mobile products, such as smartphones and smartbooks, with improved battery life ...
Electronics & Semiconductors
Apr 21, 2010
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Elpida Memory today announced that its researchers have developed the technology to mass manufacture a 0.8mm four-layer DRAM package, the thinnest memory device in the DRAM industry.
Electronics & Semiconductors
Jun 22, 2011
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(Phys.org) —Talk about storing data in the cloud. Scientists at the Joint Quantum Institute (JQI) of the National Institute of Standards and Technology (NIST) and the University of Maryland have taken this to a whole new ...
Quantum Physics
Apr 4, 2013
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Scientists at the Tokyo Institute of Technology (Tokyo Tech) and the University of Tokyo (UTokyo) have developed a new three-valued memory device inspired by solid lithium-ion batteries. The proposed device, which has an ...
Materials Science
Nov 25, 2019
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Out of sight is not out of mind for a group of Hong Kong researchers who have demonstrated that burying a layer of silver nanoparticles improves the performance of their organic electronic devices without requiring complex ...
Nanomaterials
Aug 10, 2010
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