Remaining switched on to silicon-based electronics

The difficulty of further increasing the power conversion efficiency of silicon-based components in power electronics seems to indicate that we are reaching the limits of potential advances to this technology. However, a ...

Counting down to the new ampere

After it's all over, your lights will be just as bright, and your refrigerator just as cold. But very soon the ampere—the SI base unit of electrical current—will take on an entirely new identity, and NIST scientists are ...

The first two-way, 2-D, ultra-high mobility Si (111) transistor

The two-dimensional physical properties of semiconductor materials depend keenly on a number of factors, such as material purity, surface orientation, flatness, surface reconstruction, charge carrier polarity, and temperature. ...

A single-sheet graphene p-n junction with two top gates

Researchers in Canada have designed and fabricated a single-sheet graphene p-n junction with two top gates. The standard technique, using a top and a bottom gate, can lead to damaging of the graphene layer. This is avoided ...

Record performance of dual-gate organic TFT-based RFID circuit

At today's International Solid State Circuit Conference (ISSCC), Holst Centre, Imec and TNO present a dual-gate-based organic RFID chip with record data rate and lowest reported operating voltage. For the first time, the ...