Surpassing the lower limit on computing energy consumption
New FLEET research confirms the potential for topological materials to substantially reduce the energy consumed by computing.
New FLEET research confirms the potential for topological materials to substantially reduce the energy consumed by computing.
Nanophysics
Apr 20, 2021
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591
In the paired fermion systems, the Bardeen-Cooper-Schrieffer (BCS) superfluidity and Bose-Einstein condensation (BEC) are two extreme limits of the ground state. In a new report in Science, Yuji Nakagawa and a team of scientists ...
In materials science, two-dimensional electron systems (2DES) realized at the oxide surface or interface are a promising candidate to achieve novel physical properties and functionalities in a rapidly emerging quantum field. ...
The difficulty of further increasing the power conversion efficiency of silicon-based components in power electronics seems to indicate that we are reaching the limits of potential advances to this technology. However, a ...
Engineering
Jun 5, 2019
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9
In strongly correlated materials such as cuprate high-temperature superconductors, superconductivity can be controlled either by changing the number of electrons or by changing the kinetic energy, or transfer energy, of electrons ...
Superconductivity
May 10, 2019
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12
Tokyo Tech researchers demonstrate operation energy-savings in a low price silicon power transistor structure by scaling down in all three dimensions.
Electronics & Semiconductors
Dec 5, 2016
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4
After it's all over, your lights will be just as bright, and your refrigerator just as cold. But very soon the ampere—the SI base unit of electrical current—will take on an entirely new identity, and NIST scientists are ...
Quantum Physics
Aug 29, 2016
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419
The two-dimensional physical properties of semiconductor materials depend keenly on a number of factors, such as material purity, surface orientation, flatness, surface reconstruction, charge carrier polarity, and temperature. ...
Quantum Physics
Sep 2, 2015
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1110
Researchers in Canada have designed and fabricated a single-sheet graphene p-n junction with two top gates. The standard technique, using a top and a bottom gate, can lead to damaging of the graphene layer. This is avoided ...
Nanomaterials
Nov 6, 2014
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0
Researchers from the National Institute of Advanced Industrial Science and Technology (AIST) have demonstrated the operation of a synthetic electric field tunnel field-effect transistor with a new architecture.
Electronics & Semiconductors
Aug 21, 2013
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1