Gallium nitride crystals are a promising material for the development of next-generation power semiconductor devices. NIMS and the Tokyo Tech developed a technique for growing high-quality GaN crystals with considerably fewer ...
Analytical Chemistry
Dec 23, 2020
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659
As silicon-based semiconductors reach their performance limits, gallium nitride (GaN) is becoming the next go-to material to advance light-emitting diode (LED) technologies, high-frequency transistors and photovoltaic devices. ...
Condensed Matter
Jun 29, 2018
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95
Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a girl's best friend. Their groundbreaking research focuses on gallium nitride (GaN) transistors, which are high-power, high-frequency ...
Nanomaterials
Dec 21, 2023
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30
Chemists from the University of Bonn and their U.S. colleagues at Columbia University in New York have discovered a novel mechanism in catalysis that allows the cheap, environmentally friendly synthesis of certain alcohols. ...
Materials Science
May 24, 2019
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88
Oxygen is indispensable to animal and plant life, but its presence in the wrong places can feed a fire and cause iron to rust.
Electronics & Semiconductors
Jan 12, 2016
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15
At IMS2011 this week, NXP Semiconductors N.V. is showcasing a live demo of its next-generation products based on Gallium Nitride (GaN) technology.
Electronics & Semiconductors
Jun 7, 2011
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1
Gallium nitride (GaN) material holds promise for emerging high-power devices that are more energy efficient than existing technologies – but these GaN devices traditionally break down when exposed to high voltages. Now ...
Electronics & Semiconductors
Feb 2, 2011
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0
Researchers from North Carolina State University have found a way of binding peptides to the surface of gallium nitride (GaN) in a way that keeps the peptides stable even when exposed to water and radiation. The discovery ...
Materials Science
Dec 18, 2014
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0
Researchers at North Carolina State University have determined that the surface texture of gallium nitride (GaN) materials can influence the health of nearby cells. The work is significant because GaN is a material of interest ...
Nanomaterials
Oct 14, 2016
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18
(PhysOrg.com) -- Imec and its partners in the GaN industrial affiliation program (IIAP) have produced device-quality wafers with GaN/AlGaN layers on 200mm silicon wafers.
Electronics & Semiconductors
May 26, 2011
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0
