Toshiba Corporation today announced the prototype of a new FeRAM -- Ferroelectric Random Access Memory -- that redefines industry benchmarks for density and operating speed. The new chip realizes storage of 128-megabits and ...
Electronics & Semiconductors
Feb 9, 2009
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(PhysOrg.com) -- A clever materials science technique that uses a silicon crystal as a sort of nanoscale vise to squeeze another crystal into a more useful shape may launch a new class of electronic devices that remember ...
Nanophysics
May 6, 2009
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(PhysOrg.com) -- German scientists from the Forschungszentrum Julich and the Max Planck Institute of Microstructure Physics in Halle have discovered the basis for the next generation of memory devices. In a ferroelectric ...
General Physics
Mar 29, 2011
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(PhysOrg.com) -- Novel properties of ferroelectric materials discovered at the Department of Energy's Oak Ridge National Laboratory are moving scientists one step closer to realizing a new paradigm of electronic memory storage.
Nanophysics
Apr 25, 2011
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(Phys.org)—An international team of scientists, including University of Nebraska-Lincoln physicist Evgeny Tsymbal, has discovered a new class of materials that could prove to be very useful in developing new methods of ...
Condensed Matter
Sep 18, 2012
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Japanese researchers from the National Institute of Advanced Industrial Science and Technology (AIST), have developed an all-printed flexible pressure sensor in collaboration with Ajinomoto Co., Inc.
Engineering
Aug 16, 2012
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Electronic devices of the future could be smaller, faster, more powerful and consume less energy because of a discovery by researchers at the Department of Energy's Oak Ridge National Laboratory.
Nanophysics
Jun 17, 2009
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We are reaching the limits of silicon capabilities in terms of data storage density and speed of memory devices. One of the potential next-generation data storage elements is the magnetic skyrmion. A team at the Center for ...
General Physics
Nov 14, 2018
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(PhysOrg.com) -- Engineering researchers at the University of Michigan have found a way to improve the performance of ferroelectric materials, which have the potential to make memory devices with more storage capacity than ...
Nanophysics
Mar 15, 2011
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A key objective in the electronics engineering field is to develop transistors and other electronic components that are increasingly compact and efficient, utilizing readily available processes and materials. Among the transistors ...
