Scientists develop fatigue-free ferroelectric material

Researchers at the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences, in collaboration with research groups from the University of Electronic Science and Technology of China ...

Data storage takes an electric turn

(PhysOrg.com) -- German scientists from the Forschungszentrum Julich and the Max Planck Institute of Microstructure Physics in Halle have discovered the basis for the next generation of memory devices. In a ferroelectric ...

Conducting ferroelectrics may be key to new electronic memory

(PhysOrg.com) -- Novel properties of ferroelectric materials discovered at the Department of Energy's Oak Ridge National Laboratory are moving scientists one step closer to realizing a new paradigm of electronic memory storage.

New class of materials discovered; could boost computer memory

(Phys.org)—An international team of scientists, including University of Nebraska-Lincoln physicist Evgeny Tsymbal, has discovered a new class of materials that could prove to be very useful in developing new methods of ...

Pressure sensor array made with polyamino acid

Japanese researchers from the National Institute of Advanced Industrial Science and Technology (AIST), have developed an all-printed flexible pressure sensor in collaboration with Ajinomoto Co., Inc.

When electric fields make spins swirl

We are reaching the limits of silicon capabilities in terms of data storage density and speed of memory devices. One of the potential next-generation data storage elements is the magnetic skyrmion. A team at the Center for ...

Fundamental discovery could lead to better memory chips

(PhysOrg.com) -- Engineering researchers at the University of Michigan have found a way to improve the performance of ferroelectric materials, which have the potential to make memory devices with more storage capacity than ...

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