Researchers close in on new nonvolatile memory

Researchers from the Moscow Institute of Physics and Technology, along with their colleagues from Germany and the U.S., have achieved a breakthrough in nonvolatile memory devices. The team came up with a unique method for ...

Small and stable ferroelectric domains

Researchers are one step closer to figuring out a way to make nano-sized ferroelectric domains more stable, reports a new study in journal Science.

New complex oxides could advance memory devices

The quest for the ultimate memory device for computing may have just taken an encouraging step forward. Researchers at The City College of New York led by chemist Stephen O'Brien have discovered new complex oxides that exhibit ...

page 3 from 5