The quest for the ultimate memory device for computing may have just taken an encouraging step forward. Researchers at The City College of New York led by chemist Stephen O'Brien have discovered new complex oxides that exhibit ...
Condensed Matter
Sep 17, 2014
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The improvements in random access memory that have driven many advances of the digital age owe much to the innovative application of physics and chemistry at the atomic scale.
General Physics
Nov 24, 2014
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Fujitsu Semiconductor America (FSA) today extended its growing portfolio of Ferroelectric memory products with the introduction of a new Ferroelectric Random Access Memory (FRAM) product series that features a wide voltage ...
Electronics & Semiconductors
Mar 5, 2012
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Researchers have developed a fabrication technique for single-crystalline thin-film arrays of an organic ferroelectric small molecules working as a memory device by using a solution process under ambient pressure at room ...
Materials Science
Mar 22, 2016
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Scientists from MIPT have succeeded in growing ultra-thin (2.5-nanometre) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. ...
Condensed Matter
Apr 14, 2016
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The electronics industry has a remarkable impact on the environment, yet research is devising new solutions to reduce it. Among these, a new compound with an unutterable name, the diisopropylammonium bromide (DIPAB), a new ...
Materials Science
Jan 28, 2013
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Fujitsu Semiconductor Europe (FSEU) today announced a new arrival to its FerVID family of chips for RFID tags. As with all members of the FerVID family, the MB89R112 series uses ferroelectric memory (FRAM) for fast write ...
Electronics & Semiconductors
Sep 4, 2012
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Fujitsu Semiconductor Europe today introduces a new FRAM (Ferroelectric Random Access Memory) product series with an extended voltage range of 3.0V – 5.5V, offering significantly greater design flexibility for customers ...
Electronics & Semiconductors
Feb 14, 2012
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The electrical and mechanical responses of crystal materials, and the control of their coupled effect, form one of the central themes in material science. They are vital to applications such as ultrasonic generators and non-volatile ...
General Physics
Sep 17, 2018
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Fujitsu Semiconductor today announced the addition of new small package to the MB85RC16, the 16kbit ultra low-power Ferroelectric Random Access Memory (FRAM) device with an I2C interface.
Electronics & Semiconductors
Nov 27, 2012
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