New complex oxides could advance memory devices

The quest for the ultimate memory device for computing may have just taken an encouraging step forward. Researchers at The City College of New York led by chemist Stephen O'Brien have discovered new complex oxides that exhibit ...

New Fujitsu V series FRAMs deliver optimal design flexibility

Fujitsu Semiconductor America (FSA) today extended its growing portfolio of Ferroelectric memory products with the introduction of a new Ferroelectric Random Access Memory (FRAM) product series that features a wide voltage ...

New technique for advanced printed electronics

Researchers have developed a fabrication technique for single-crystalline thin-film arrays of an organic ferroelectric small molecules working as a memory device by using a solution process under ambient pressure at room ...

A new material for environmentally friendlier electronics

The electronics industry has a remarkable impact on the environment, yet research is devising new solutions to reduce it. Among these, a new compound with an unutterable name, the diisopropylammonium bromide (DIPAB), a new ...

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