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Dec 20, 2004

Elpida Ships Fully-Buffered DIMM Samples for Advanced Performance in Next-Generation Servers

Memory Modules Provide Unparalleled Speed and Density Compared to Existing Registered DIMMs Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it has shipped ...

Dec 20, 2004

Micron Ships First Production 2 Gigabyte 90 Nanometer NAND Flash Memory Products Today

Micron Technology, Inc., today shipped the Company’s first production 2 gigabit (Gb) NAND flash memory products, hitting the target of its entry strategy into the NAND market. The demand for increased memory in mobile and ...

Dec 17, 2004

Elpida Memory Develops Distortion Control Technology to Improve Mass Production of Highly-Reliable DRAM

Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it has developed a new distortion control technology that improves data retentiveness-an element that is crucial ...

Dec 15, 2004

Toshiba and NEC Develop Key Technologies for High-Density MRAM

Toshiba Corporation and NEC Corporation today announced two key advancements toward development of a magnetoresistive random access memory, a technology seen as key to the development of future generations of high performance ...

Dec 15, 2004

Infineon Demonstrated New Tunneling FET Enabling Scalable Ultra-Low Voltage Processes in Standard Silicon Technology

Infineon Demonstrated New Tunneling Field Effect Transistors Enabling Scalable Ultra-Low Voltage Processes in Standard Silicon Technology At the 2004 IEEE International Electron Devices Meeting (IEDM) in San Francisco (December ...

Dec 14, 2004

Infineon Achieves Breakthrough in DRAM Trench Technology

Infineon Technologies AG presented a highly manufacturable 70nm process technology for future DRAM generations that is based on deep trench (DT) cells on 300mm wafers at the 2004 IEEE International Electron Devices Meeting ...

Dec 10, 2004

STMicroelectronics Unveils Advanced Non-Volatile Memory and Advanced CMOS Platform Developments

STMicroelectronics, one of the world's leading suppliers of semiconductor devices, will participate as presenter or co-author in fifteen papers at the IEDM 2004 (International Electron Devices Meeting) Conference, which takes ...

Dec 9, 2004

Samsung Ships World's First 512Mb GDDR3

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, has begun shipping the world's first 512-megabit (Mb) GDDR3 memory device which is the most advanced graphics double-data-rate synchronous DRAM ...

Dec 8, 2004

Philips highlights leading consumer-oriented semiconductor R&D at IEDM 2004

Record-breaking performance of 90-nm RF CMOS process takes advanced development to new levels At this year's IEEE International Electron Devices Meeting (IEDM, San Francisco, USA, 13 - 15 December 2004), Philips' R&D scientists ...

Dec 6, 2004

IBM Unveils World's Smallest SRAM Memory Cell

IBM today announced it has built a critical component for a high-speed computer memory that is about ten times smaller than those currently available, potentially enabling a major system performance boost for critical business ...

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