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Nov 14, 2005

Samsung Now Mass Producing First 90nm 512Mb Mobile DRAM

Samsung Electronics announced that it has started to mass produce 512Mb DRAM (dynamic random access memory) for mobile products, using 90nm circuitry. This marks the first time that 512Mb mobile DRAM will be available anywhere ...

Oct 27, 2005

Samsung Develops Industry’s First Ultra-Fast GDDR4 Graphics DRAM

Samsung Electronics has developed the industry's fastest computer graphics memory and has shipped it to major graphics card manufacturers for testing. The GDDR4 (Graphics Double Data Rate 4 th Generation) memory process es ...

Oct 14, 2005

Spansion Announces World’s First Single-chip 1 Gigabit NOR Flash Memory

Spansion LLC, the Flash memory venture of AMD and Fujitsu Limited, today announced it is sampling the world’s first single-chip 1 gigabit (Gb) NOR Flash memory device to customers in the embedded market. Based on 90-nanometer ...

Oct 13, 2005

Samsung Develops World's First 512-Megabit DDR2 with 70nm Process Technology

Samsung Electronics announced that it has completed development of the world-first 512-Megabit (Mb) DDR2 SDRAM using 70-nanometer process, the smallest process technology yet applied to a DRAM device.

Jul 13, 2005

ProMOS Debuts First 90nm Silicon with High Yield

ProMOS Technologies today announced that the first pilot lot by 90nm stack technology node at ProMOS 300mm Fab 3 has successfully wafered out with yield above 60%. ProMOS is the very first Taiwan DRAM company to achieve this ...

Jul 13, 2005

Elpida Memory's 512 Megabit Mobile RAM Device Fits in Smaller Package for 3G Phones

90 nm Process Technology Enables Smaller Die Size, Easier Implementation in Multi-Chip-Package and System-in-Package Designs Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today ...

Jun 29, 2005

Micron Introduces Very Low Profile Memory Modules in the 512 Mb and 1 Gb Densities

Micron Technology, Inc., today announced the availability of 512 megabyte and 1 gigabyte double data rate (DDR) and DDR2 very low profile (VLP) registered dual-inline memory modules (RDIMMs). Micron's VLP DDR RDIMMs are designed ...

Jun 28, 2005

AMD sues Intel over monopoly abuses

AMD announced today that it filed an antitrust complaint against Intel Corporation yesterday in U.S. federal district court for the district of Delaware under Section 2 of the Sherman Antitrust Act, Sections 4 and 16 of the ...

Jun 27, 2005

0.4-V DRAM array technology using twin cells for next generation mobile devices

Enabling the longer retention time and fast read/write operation under low voltage condition Hitachi, Ltd. in cooperation with Elpida Memory, Inc., have proposed a new DRAM (*1) circuit design enabling 0.4-V operation. The ...

Jun 23, 2005

Samsung First to Produce 90nm 1 Gb DDR2 DRAM

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing a monolithic 1 Gigabit (Gb) DRAM chip using more operationally efficient and performance-enhancing ...

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