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Mar 2, 2006

New nanotech process could increase computer memory

A team of scientists from the Department of Physics at the Universitat Autònoma de Barcelona, in collaboration with colleagues from the Argonne National Laboratory (USA) and the Spintec laboratory (Grenoble, France), ...

Feb 14, 2006

Samsung Develops Ultra-fast Graphics Memory

Samsung Electronics announced that it has developed the world’s fastest graphics memory - a GDDR4 graphics DRAM chip with much faster processing than an earlier version that Samsung led the industry in prototyping only ...

Feb 13, 2006

World's first MDDI-compliant LCD controller optimized for cell phones

Toshiba Corporation announced the introduction of the world's first MDDI-compliant LCD controller optimized for cell phones equipped with high-resolution VGA LCD displays. Dubbed the MDDI LCD Bridge and designated TC358720XBG, ...

Jan 27, 2006

Korean DRAM finds itself shut out of Japan

Japan may claim that the countervailing duty it slaps against Korean DRAM chip maker Hynix from today is just a protest against unfair trade practices and to curb dumping, but there's a widespread belief that the country ...

Dec 19, 2005

Elpida Memory Ships Samples of 2 Gigabit DDR2 SDRAM using 80 nm Process Technology

Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced the shipment of 80 nm-based 2 Gigabit DDR2 SDRAM samples. These samples are among the first 80 nm-based devices in the ...

Dec 14, 2005

Samsung Now Mass Producing 50-percent Faster Graphics Memory

Samsung Electronics announced today that it is mass producing the fastest graphics memory device in the world - a 900 MHz Graphics Double Data Rate 3 (GDDR3) chip. The device - already being used in graphics cards for PCs, ...

Dec 9, 2005

Samsung Offers 8GB FB-DIMM for Servers

Samsung Electronics today announced a new 8GB server memory offering. Following the introduction of its 8GB Registered Dual In-line Memory Module (R-DIMM) in October, Samsung has now increased the density of its Fully Buffered ...

Dec 8, 2005

A 20-year old mystery mechanism influencing DRAM cell retention time fluctuation clarified

Hitachi, Ltd., in cooperation with Elpida Memory announced today that they have identified that the leakage current fluctuation of the p-n junction*1) is the primary factor influencing the charge retention time fluctuation ...

Dec 6, 2005

Applied Materials Announces Advanced CVD Aluminum Technology

Applied Materials, Inc. today announced its Applied CVD Al process chamber for building current and next-generation high-density interconnects in Flash and DRAM memory chips. Using aluminum deposition technology, which continues ...

Dec 5, 2005

Hynix Develops World’s Fastest and Highest Density Graphics Memory

Hynix Semiconductor, Inc. today announced the availability of the world’s first 512 Megabit GDDR4 DRAM, the DRAM industry’s fastest and highest density graphics memory.

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