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Hardware Dec 27, 2006

Samsung Reveals Industry's First Gigabit-density Mobile DRAM

Samsung Electronics announced that it has developed the industry's first one gigabit (Gb) Mobile DRAM (dynamic random access memory) for mobile products, using 80nm process technology.

Hardware Dec 13, 2006

Samsung Unveils New Powerhouse Fusion Memory Solution - OneDRAM

Samsung Electronics today announced that it has developed a prototype fusion memory chip that can significantly increase the data processing speed between processors in mobile applications.

Nanomaterials Nov 2, 2006

Nantero Announces Routine Use of Nanotubes in Production CMOS Fabs

Nantero, Inc., a nanotechnology company using carbon nanotubes for the development of next-generation semiconductor devices, has resolved all of the major obstacles that had been preventing carbon nanotubes from being used ...

Hardware Oct 23, 2006

Samsung Develops First 50nm DRAM Chip

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has developed the industry’s first 50-nanometer (nm) DDR2 DRAM (dynamic random access memory) chip, which will increase ...

Electronics & Semiconductors Sep 13, 2006

NEC Electronics Introduces Industry's First Ultra-Low-Power 55-nanometer Embedded DRAM Technology

NEC Electronics today announced the industry's first 55- nanometer CMOS-compatible embedded DRAM (eDRAM) technology, UX7LSeD.

Electronics & Semiconductors Sep 12, 2006

Trenches create memory space

The requirements are tightening up. Computers are having to become more and more efficient. A new technology boosts memory capacity: etching the silicon wafer creates deep trenches that increase its capacity to store data.

Hardware Sep 12, 2006

Samsung Introduces the Next Generation of Nonvolatile Memory - PRAM

Samsung Electronics announced that it has completed the first working prototype of what is expected to be the main memory device to replace high density NOR flash within the next decade - a Phase-change Random Access Memory ...

Hardware Aug 29, 2006

Samsung First to Mass-produce 1Gb DDR2 Memory with 80nm Process Technology

Samsung Electronics, the world leader in advanced memory technology, announced today mass production of 1Gigabit (Gb) DDR2 DRAM memory using 80 nanometer (nm) process technology. While monolithic 1Gb DDR2 is available today, ...

Hardware Jul 26, 2006

Samsung 4 GB solid state disk to eliminate hard drive delays in Windows Vista-powered PCs

Samsung Electronics today announced that a 4GB solid state disk (SSD), now being readied for production, will also serve as a high speed NAND flash cache for notebooks and PCs in conjunction with the Microsoft Windows Vista ...

Hardware Jul 19, 2006

Samsung Produces 60-Nanometer 8-Gigabit NAND Flash Memory

Samsung Electronics today announced that it has begun mass producing an 8-Gigabit (Gb) NAND flash memory device, providing a much larger and more affordable storage density for consumer and mobile applications such as mobile ...

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