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Toshiba Corporation today announced development of the "SpursEngine", a high-performance stream processor integrating Synergistic Processing Element (SPE) cores derived from the Cell Broadband Engine (Cell/B.E.). The SpursEngine ...
Scientists from the University of Pennsylvania have developed nanowires capable of storing computer data for 100,000 years and retrieving that data a thousand times faster than existing portable memory devices such as Flash ...
New research led by the U.S. Department of Energy's Argonne National Laboratory physicist Matthias Bode provides a more thorough understanding of new mechanisms, which makes it possible to switch a magnetic nanoparticle without ...
Samsung Electronics announced the opening of the largest 300mm NAND flash memory wafer plant in Austin, Texas on Thursday, in ceremonies that included Texas Governor Rick Perry and Samsung Electronics Vice Chairman & CEO ...
Hynix Semiconductor has entered into a strategic partnership with IMEC, Europe’s leading independent nanoelectronics research center, to perform research and development for the (sub)-32nm memory process generations.
Advanced Micro Devices hopes to have its next-generation mobile microprocessor and platform in the hands of OEMs by the middle of 2008.
Samsung Electronics today announced that it has developed the first all-DRAM stacked memory package using 'through silicon via' (TSV) technology, which will soon result in memory packages that are faster, smaller and consume ...
Samsung Electronics today announced that it has developed the first all-DRAM stacked memory package using ‘through silicon via’ (TSV) technology, which will soon result in memory packages that are faster, smaller and ...
Taiwan Semiconductor Manufacturing Company, Ltd. today announced the foundry industry’s first functional 65nm embedded DRAM customer product. The product contains millions of DRAM bits and was silicon verified first time ...
Samsung Electronics announced today that it has begun mass producing the industry’s first 1Gigabit (Gb) DDR2 DRAM (dynamic random access memory) using 60 nanometer (nm)–class process technology.
