(PhysOrg.com) -- University of Maryland researchers have discovered a way to control magnetic properties of graphene that could lead to powerful new applications in magnetic storage and magnetic random access memory.
Nanophysics
Apr 14, 2011
16
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(PhysOrg.com) -- German scientists from the Forschungszentrum Julich and the Max Planck Institute of Microstructure Physics in Halle have discovered the basis for the next generation of memory devices. In a ferroelectric ...
General Physics
Mar 29, 2011
2
0
RIKEN, the University of Tokyo, and the National Institute for Materials Science (NIMS; President: Sukekatsu Ushioda) succeeded for the first time in generating and visualizing electron spin vortex state "skyrmion molecules" ...
General Physics
Feb 25, 2014
0
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Memory based on electrically-induced "resistive switching" effects have generated a great deal of interest among engineers searching for faster and smaller devices because resistive switching would allow for a higher memory ...
Nanophysics
Sep 20, 2013
2
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A new, environmentally-friendly electronic alloy consisting of 50 aluminum atoms bound to 50 atoms of antimony may be promising for building next-generation "phase-change" memory devices, which may be the data-storage technology ...
Electronics & Semiconductors
Sep 13, 2013
2
0
(Phys.org) —Resistive memory cells (ReRAM) are regarded as a promising solution for future generations of computer memories. They will dramatically reduce the energy consumption of modern IT systems while significantly ...
Nanophysics
Apr 24, 2013
0
0
(Phys.org) -- When searching for the technology to boost computer speeds and improve memory density, the best things come in the smallest packages.
Nanomaterials
Jun 11, 2012
0
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(PhysOrg.com) -- For the first time, scientists at IBM Research have demonstrated that a relatively new memory technology, known as phase-change memory (PCM), can reliably store multiple data bits per cell over extended periods ...
Electronics & Semiconductors
Jun 30, 2011
1
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Slanted exterior edges on tiny magnetic disks could lead to a breakthrough in data processing. Materials researchers of the Helmholtz-Zentrum Dresden-Rossendorf, Germany, were able to create magnetic vortices with a diameter ...
Condensed Matter
Mar 14, 2011
0
0
Intel Corp. and Numonyx today announced a key breakthrough in the research of phase change memory (PCM), a new non-volatile memory technology that combines many of the benefits of today's various memory types.
Electronics & Semiconductors
Oct 29, 2009
4
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