The National Institute for Materials Science (NIMS) has achieved a tunnel magnetoresistance (TMR) ratio of 631% at room temperature, breaking the previous world record, which had stood for 15 years.
General Physics
May 9, 2023
0
22
A tunnel junction is a device consisting of two conducting layers separated by an insulating layer. Classically, the resistance for driving current across an insulating layer is infinite; however, when the insulating layer ...
Nanophysics
Aug 21, 2020
0
9
Tohoku University researchers have, for the first time, developed the technology for the nanosecond operation of the spintronics-based probabilistic bit (p-bit)—dubbed "the poor man's quantum bit" (q-bit).
General Physics
Mar 19, 2021
0
369
A research group from Tohoku University has revealed ultra-small magnetic tunnel junctions (MTJs) down to a single-digit-nanometer scale that have sufficient retention properties and yet can be switched by a current.
General Physics
Feb 21, 2018
0
15
Researchers have demonstrated theoretically that oscillation of 5–140 GHz is possible by supplying direct current to a ferromagnetic nanocontact device.
General Physics
Nov 8, 2012
1
0
Imagine a future where computers can learn and make decisions in ways that mimic human thinking, but at a speed and efficiency that are orders of magnitude greater than the current capability of computers.
Nanophysics
May 1, 2024
0
57
Random-access memory (RAM) is a fast electronic device used in computers to temporarily store data. Traditional RAM is based on the flow of electrical current for data processing. To make RAM faster, more energy efficient ...
General Physics
Dec 5, 2012
0
0
Researchers at Tohoku University have developed guidelines for a single-nanometer magnetic tunnel junction (MTJ), allowing for performance tailoring to meet the requirements of diverse applications, ranging from AI/IoT to ...
Nanophysics
Jan 17, 2024
0
29
Researchers at the Center for Innovative Integrated Electronic Systems (CIES) at Tohoku University have successfully observed microscopic chemical bonding states in ultrathin MgO—an important determinant in STT-MRAM performance. ...
Materials Science
Aug 5, 2019
0
5
The ability to control the magnetization of electrodes made from ferromagnets could help develop more energy-efficient devices for spintronic applications, including data storage technologies, wearable electronics and implantable ...
General Physics
Apr 27, 2020
0
4
