News tagged with hemt
Fujitsu Develops World's First Gallium-Nitride HEMT for Power Supply
Fujitsu Laboratories today announced the development of a new structure for gallium-nitride high electron-mobility transistors (GaN)(HEMT) that can minimize power loss in power supplies, thus enabling reduced ...
Jun 24, 2009 |
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Fujitsu develops GaN HEMT power amplifier featuring world's highest output in millimeter-wave W-Band
Fujitsu announced the development of a power amplifier using gallium nitride (GaN) High Electron Mobility Transistors (HEMT) that has achieved the world's highest output performance of 1.3W for wireless communications ...
Oct 06, 2010 |
4.7 / 5 (3) |
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World's first GaN HEMT T/R module operating in the C-Ku band
Fujitsu Laboratories today announced that it has successfully developed the world's first transmitter/receiver (T/R) module using gallium-nitride (GaN)high electron mobility transistor (HEMT) technology that ...
Jun 06, 2011 |
5 / 5 (2) |
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Fujitsu Develops Millimeter-Wave Gallium-Nitride Transceiver Amplifier Chipset
Fujitsu announced today the development of the world's first gallium-nitride HEMT-based transceiver amplifier chipset for broadband wireless transmission equipment operating in the millimeter bandwidth, the ...
Sep 30, 2009 |
3 / 5 (1) |
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