Related topics: transistors

Faster, smaller and more economical gallium nitride transistors

For the first time, researchers from CNRS France and ETH Zurich have succeeded in producing high-performance high-electron-mobility transistors (HEMTs) made of gallium nitride (GaN) on a silicon(110) wafer. This makes these ...

Novel alloy could produce hydrogen fuel from sunlight

Scientists from the University of Kentucky and the University of Louisville have determined that an inexpensive semiconductor material can be "tweaked" to generate hydrogen from water using sunlight.

Nanowires get into the groove

Weizmann Institute scientists have discovered that growing nanowires out, not up, can keep them in line.

Nano-LEDs emit full visible spectrum of light

(PhysOrg.com) -- Physicists from Taiwan have designed and fabricated nano-sized light-emitting diodes (LEDs) that emit light spanning the entire visible spectrum. Although the tiny full-color LEDs aren't intended for commercial ...

NXP brings GaN technology mainstream

At IMS2011 this week, NXP Semiconductors N.V. is showcasing a live demo of its next-generation products based on Gallium Nitride (GaN) technology.

World's first GaN HEMT T/R module operating in the C-Ku band

Fujitsu Laboratories today announced that it has successfully developed the world's first transmitter/receiver (T/R) module using gallium-nitride (GaN)high electron mobility transistor (HEMT) technology that features an output ...

Zeroing in on the elusive green LED

Researchers at Rensselaer Polytechnic Institute have developed a new method for manufacturing green-colored LEDs with greatly enhanced light output.

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