Fujitsu Laboratories today announced that it has successfully developed the world's first transmitter/receiver (T/R) module using gallium-nitride (GaN)high electron mobility transistor (HEMT) technology that features an output ...
Electronics & Semiconductors
Jun 6, 2011
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Researchers at Rensselaer Polytechnic Institute have developed a new method for manufacturing green-colored LEDs with greatly enhanced light output.
General Physics
Apr 25, 2011
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Gallium nitride (GaN) material holds promise for emerging high-power devices that are more energy efficient than existing technologies – but these GaN devices traditionally break down when exposed to high voltages. Now ...
Electronics & Semiconductors
Feb 2, 2011
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Gallium nitride (GaN) and zinc oxide (ZnO) are among the most technologically relevant semiconducting materials. Gallium nitride is ubiquitous today in optoelectronic elements such as blue lasers (hence the blue-ray disc) ...
Nanophysics
Jan 26, 2011
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Light-emitting diodes (LEDs) are an increasingly popular technology for use in energy-efficient lighting. Researchers from North Carolina State University have now developed a new technique that reduces defects in the gallium ...
Condensed Matter
Jan 25, 2011
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Panasonic today announced the development of a new technique to drastically increase the blocking voltage of Gallium Nitride (GaN) -based power switching transistor on silicon (Si) substrates. The blocking voltage of the ...
Electronics & Semiconductors
Dec 8, 2010
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Fujitsu announced the development of a power amplifier using gallium nitride (GaN) High Electron Mobility Transistors (HEMT) that has achieved the world's highest output performance of 1.3W for wireless communications in ...
Electronics & Semiconductors
Oct 6, 2010
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Researchers from North Carolina State University have patented technology that is expected to revolutionize the global energy and communications infrastructure – and create U.S. jobs in the process.
Electronics & Semiconductors
Oct 4, 2010
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NIST researchers grow nanowires made of semiconductors -- gallium nitride alloys -- by depositing atoms layer-by-layer on a silicon crystal under high vacuum. NIST has the unusual capability to produce these nanowires without ...
Nanomaterials
Jul 30, 2010
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Panasonic today announced the development of a high power Gallium Nitride (GaN) transistor for long-distance communication at millimeter-wave frequencies. A 25GHz wireless transceiver is fabricated using the GaN transistor. ...
Electronics & Semiconductors
Jul 23, 2010
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