When electric fields make spins swirl

We are reaching the limits of silicon capabilities in terms of data storage density and speed of memory devices. One of the potential next-generation data storage elements is the magnetic skyrmion. A team at the Center for ...

First flexible memory device using oxide ferroelectric material

For the first time, researchers have been able to deposit an ultra-thin oxide ferroelectric film onto a flexible polymer substrate. The research team used the flexible ferroelectric thin films to make non-volatile memory ...

New complex oxides could advance memory devices

The quest for the ultimate memory device for computing may have just taken an encouraging step forward. Researchers at The City College of New York led by chemist Stephen O'Brien have discovered new complex oxides that exhibit ...

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