Conducting ferroelectrics may be key to new electronic memory

(PhysOrg.com) -- Novel properties of ferroelectric materials discovered at the Department of Energy's Oak Ridge National Laboratory are moving scientists one step closer to realizing a new paradigm of electronic memory storage.

World record data density for ferroelectric recording

Scientists at Tohoku University in Japan have recorded data at a density of 4 trillion bits per square inch, which is a world record for the experimental "ferroelectric" data storage method. As described the journal Applied ...

Researchers close in on new nonvolatile memory

Researchers from the Moscow Institute of Physics and Technology, along with their colleagues from Germany and the U.S., have achieved a breakthrough in nonvolatile memory devices. The team came up with a unique method for ...

Turning a material upside-down can sometimes make it softer

Through the combined effect of flexoelectricity and piezoelectricity, researchers at the ICN2 led by ICREA Gustau Catalán in collaboration with the UAB have found that polar materials can be made more or less resistant to ...

Doubling data density

An electronic device that could lead to smaller, low-power memory chips can now be controlled and probed by light, as revealed by research from KAUST.

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