(Phys.org)—At home, in the car or with industrial processes – glass is a universal material. Its properties are so extraordinary that frequently there are no alternatives to this material. Take, for example, high-temperature ...
Condensed Matter
Oct 26, 2012
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Fujitsu Semiconductor Europe has demonstrated the transmission of >100Gbps over a single CEI-28G-VSR channel, effectively quadrupling the data rate throughput defined by the Optical Internetworking Forum (OIF) for this chip-to-chip ...
Electronics & Semiconductors
Sep 6, 2012
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(Phys.org)—Over the past several years, major advances have been made at UCLA in the field of lens-less computational imaging technology, particularly in the design of lens-free holographic microscopes, which, because of ...
Optics & Photonics
Sep 5, 2012
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(Phys.org)—Microchips are pervasive in today's high-tech society, playing integral roles in the inner workings of your cell phone to your Keurig coffee machine.
Nanophysics
Aug 27, 2012
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(PhysOrg.com) -- At the heart of digital photography is a chip called an image sensor that captures a map of the intensity of the light as it comes through the lens and converts it to an electronic signal.
Engineering
Apr 3, 2012
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Sony Corporation today announced the development of two CMOS image sensor models designed for use in smartphones and other devices. They are equipped with Sony's unique “RGBW Coding” function which allows images ...
Consumer & Gadgets
Jan 24, 2012
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As electronic devices become smaller and more sophisticated, the search for compact nonvolatile memory becomes increasingly important. However, conventional silicon technologies, such as complementary metal-oxide-semiconductor ...
Electronics & Semiconductors
Dec 23, 2011
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Sharp Corporation has developed a 12.1-Megapixel, 1/3.2-inch CMOS camera module with optical image stabilization that features the industry’s thinnest profile (5.47 mm in height). The new RJ63YC100 is intended for use ...
Hardware
Dec 1, 2011
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Imec realized an integrated poly-SiGe-based piezoresistive pressure sensor directly fabricated above 0.13 µm copper (Cu) -backend CMOS technology. This represents not only the first integrated poly-SiGe pressure sensor ...
Electronics & Semiconductors
Oct 11, 2011
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For the first time, researchers from CNRS France and ETH Zurich have succeeded in producing high-performance high-electron-mobility transistors (HEMTs) made of gallium nitride (GaN) on a silicon(110) wafer. This makes these ...
Electronics & Semiconductors
Sep 21, 2011
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