Carbon nanotubes, large cylindrical molecules composed of hybridized carbon atoms arranged in a hexagonal structure, recently attracted significant attention among electronics engineers. Due to their geometric configuration ...
(Phys.org) —Researchers have demonstrated a new carbon nanotube (CNT)-based logic device that consumes just 0.1 nanowatts (nW) in its static ON and OFF states, representing the lowest reported value by 3 orders of magnitude ...
(PhysOrg.com) -- Computers of the future could be operating not on electrons, but on tiny waves traveling through an electron "fluid," if a new proposal is successful. The new circuit design, recently introduced by Dr. Héctor ...
Australian engineers have discovered a new way of precisely controlling single electrons nestled in quantum dots that run logic gates. What's more, the new mechanism is less bulky and requires fewer parts, which could prove ...
Condensed Matter
Jan 12, 2023
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1351
Columbia Engineering researchers have, for the first time, harnessed the molecular machinery of living systems to power an integrated circuit from adenosine triphosphate (ATP), the energy currency of life. They achieved this ...
Biochemistry
Dec 7, 2015
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(Phys.org) —Researchers are developing a new type of semiconductor technology for future computers and electronics based on "two-dimensional nanocrystals" layered in sheets less than a nanometer thick that could replace ...
Nanophysics
Apr 16, 2013
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(PhysOrg.com) -- At the heart of digital photography is a chip called an image sensor that captures a map of the intensity of the light as it comes through the lens and converts it to an electronic signal.
Engineering
Apr 3, 2012
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0
(PhysOrg.com) -- A new transistor made from graphene - the world's thinnest material - has been developed by a research team at the University of Southampton.
Nanophysics
Feb 8, 2011
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(PhysOrg.com) -- IBM scientists today unveiled a new chip technology that integrates electrical and optical devices on the same piece of silicon, enabling computer chips to communicate using pulses of light (instead of electrical ...
Electronics & Semiconductors
Dec 1, 2010
7
0
(PhysOrg.com) -- European researchers who created an ultra-fast, extremely high-resolution video camera have enabled dozens of medical applications, including one scenario that can record 'thought' processes travelling along ...
Engineering
Oct 12, 2009
0
0
Complementary metal–oxide–semiconductor (CMOS) ( /ˈsiːmɒs/) is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. Frank Wanlass patented CMOS in 1967 (US patent 3,356,858).
CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS). The words "complementary-symmetry" refer to the fact that the typical digital design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.
Two important characteristics of CMOS devices are high noise immunity and low static power consumption. Significant power is only drawn when the transistors in the CMOS device are switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor-transistor logic (TTL) or NMOS logic. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.
The phrase "metal–oxide–semiconductor" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminum was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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