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Enabling the longer retention time and fast read/write operation under low voltage condition Hitachi, Ltd. in cooperation with Elpida Memory, Inc., have proposed a new DRAM (*1) circuit design enabling 0.4-V operation. The ...
Japan may claim that the countervailing duty it slaps against Korean DRAM chip maker Hynix from today is just a protest against unfair trade practices and to curb dumping, but there's a widespread belief that the country ...
Elpida Memory, the third largest Dynamic Random Access Memory (DRAM) manufacturer in the world, today announced that it had developed the industry's first 4-gigabit next-generation mobile memory chips for smart phones, tablet ...
At today’s IEEE International Electron Devices Meeting, IMEC reports significant progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal gates targeting the ...
Hitachi, Ltd., in cooperation with Elpida Memory announced today that they have identified that the leakage current fluctuation of the p-n junction*1) is the primary factor influencing the charge retention time fluctuation ...
90 nm Process Technology Enables Smaller Die Size, Easier Implementation in Multi-Chip-Package and System-in-Package Designs Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today ...
Elpida Memory today announced that it has completed development of a Cu-TSV (Through Silicon Via) multi-layer 8-Gigabit DRAM.
IMEC reports functional 0.186µm2 32nm SRAM cells made with FinFETs from which the contact layer was successfully printed using ASML’s full field extreme ultraviolet (EUV) Alpha Demo Tool (ADT). Applied Materials, using ...
Advanced Technology Contributes to Increased Capacity and Smaller Device Size Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it has started production of ...
At this week’s VLSI Symposium, IMEC presents significant progress in the manufacturability, circuit performance and reliability of FinFETs. The results advance FinFET process technology towards being a candidate for the ...
