Research reported in Applied Physics Express (APEX) describes the development of 'vertically orientated' GaN-based transistors with blocking voltages exceeding 1kV. These findings are important for the application of nitride ...
General Physics
Aug 24, 2015
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Samsung Electronics today announced that it reached another milestone in the development of 14-nanometer (nm) FinFET process technology with the successful tape-out of multiple development vehicles in collaboration with its ...
Electronics & Semiconductors
Dec 21, 2012
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At this week's IEEE International Electron Devices Meeting (IEDM 2012), imec addressed key challenges of scaling beyond silicon-channel finFETs. Imec showed that channel mobility can be boosted by growing non-Si channels ...
Electronics & Semiconductors
Dec 12, 2012
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At today's International Solid State Circuit Conference (ISSCC), Holst Centre, Imec and TNO present a dual-gate-based organic RFID chip with record data rate and lowest reported operating voltage. For the first time, the ...
Electronics & Semiconductors
Feb 9, 2010
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