wo-dimensional materials can be used to create smaller, high-performance transistors traditionally made of silicon, according to Saptarshi Das, assistant professor of engineering science and mechanics (ESM) in Penn State's ...
Nanophysics
Feb 4, 2021
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1130
Research reported in Applied Physics Express (APEX) describes the development of 'vertically orientated' GaN-based transistors with blocking voltages exceeding 1kV. These findings are important for the application of nitride ...
General Physics
Aug 24, 2015
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23
At this week's IEEE International Electron Devices Meeting (IEDM 2012), imec addressed key challenges of scaling beyond silicon-channel finFETs. Imec showed that channel mobility can be boosted by growing non-Si channels ...
Electronics & Semiconductors
Dec 12, 2012
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0
A collaborative study led by the University of Wollongong confirms switching mechanism for a new, proposed generation of ultra-low energy topological electronics.
Nanophysics
Mar 9, 2022
0
11
