Relocating LEDs from silicon to copper enhances efficiency
Chinese researchers have succeeded in transferring gallium nitride (GaN) light-emitting diodes (LEDs) grown on a layer of silicon to a layer of copper.
Chinese researchers have succeeded in transferring gallium nitride (GaN) light-emitting diodes (LEDs) grown on a layer of silicon to a layer of copper.
General Physics
Jun 14, 2012
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A research group at the NIMS International Center for Materials Nanoarchitectonics (MANA) has proved that the electrical resistance of a metal single atomic layer on a silicon surface becomes zero by superconductivity.
Superconductivity
Nov 24, 2011
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French researchers have succeeded in creating a conductive layer on the surface of strontium titanate (SrTiO3), a transparent insulating material considered to be very promising for the development of future microelectronics ...
Nanomaterials
Jan 18, 2011
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Researchers from TU Delft in the Netherlands have shown how the energy yield of relatively cheap solar panels, made of amorphous silicon, can be considerably raised: from around 7 percent to 9 percent.
Energy & Green Tech
Jul 6, 2010
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(PhysOrg.com) -- Toshiba Corporation today announced that it has developed a breakthrough technology for steep channel impurity distribution that delivers a solution to a key problem for 20nm generation CMOS technology. The ...
Electronics & Semiconductors
Dec 9, 2009
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Scientists from ITMO University have suggested a new solar cell coating that combines features of an electrode and those of a light-trapping structure. The coating enabled researchers to cut down on reflected light and avoid ...
Optics & Photonics
Nov 20, 2017
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Researchers at Sandia National Laboratories have received a $1.2 million award from the U.S. Department of Energy's SunShot Initiative to develop a technique that they believe will significantly improve the efficiencies of ...
Energy & Green Tech
Nov 3, 2014
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The National Physical Laboratory (NPL) has collaborated with Chalmers University of Technology and Linköping University in Sweden to help develop a fast and inexpensive tool for quality control of graphene grown on silicon ...
Nanomaterials
Aug 29, 2013
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At this week's European Photovoltaic Solar Energy Conference and Exhibition (27th EUPVSEC, 24/08-28/08), imec, RENA and SoLayTec present thin (165µm), large area (156x156mm2) i-PERC-type Silicon solar cells with ALD (atomic ...
Electronics & Semiconductors
Sep 24, 2012
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An advanced processing technology being pioneered at UNSW to improve the efficiency of first generation silicon solar cells has turned two of the world's leading solar manufacturers into unlikely collaborators.
Energy & Green Tech
Sep 3, 2012
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