More energy efficient transistors through quantum tunneling

(PhysOrg.com) -- Researchers at the University of Notre Dame and Pennsylvania State University have announced breakthroughs in the development of tunneling field effect transistors (TFETs), a semiconductor technology that ...

Terahertz pulse increases electron density 1,000-fold

Researchers at Kyoto University have announced a breakthrough with broad implications for semiconductor-based devices. The findings, announced in the December 20 issue of the journal Nature Communications, may lead to the ...

S-t-r-e-t-c-h-i-n-g electrical conductance to the limit

Individual molecules have been used to create electrical components like resistors, transistors and diodes, that mimic the properties of familiar semiconductors. But according to Nongjian (NJ) Tao, a researcher at the Biodesign ...

Bright future for gaN nanowires

The gallium nitride nanowires grown by PML scientists may only be a few tenths of a micrometer in diameter, but they promise a very wide range of applications, from new light-emitting diodes and diode lasers to ultra-small ...

Plasma etching pushes the limits of a shrinking world

Plasma etching (using an ionized gas to carve tiny components on silicon wafers) has long enabled the perpetuation of Moore's Law -- the observation that the number of transistors that can be squeezed into an integrated circuit ...

page 7 from 11