IBM today announced a materials science breakthrough at the molecular level that could pave the way for a new class of non-volatile memory and logic chips that would use less power than today's silicon devices like cell phones. ...
Electronics & Semiconductors
Mar 21, 2013
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(PhysOrg.com) -- For the first time, scientists at IBM Research have demonstrated that a relatively new memory technology, known as phase-change memory (PCM), can reliably store multiple data bits per cell over extended periods ...
Electronics & Semiconductors
Jun 30, 2011
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Security concerns are one of the key obstacles to the adoption of new non-volatile main memory (NVMM) technology in next-generation computers, which would improve computer start times and boost memory capacity. But now researchers ...
Computer Sciences
May 17, 2011
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(PhysOrg.com) -- The race is on for a successor to the popular 'flash' memory used in portable devices. European researchers think they have found a candidate in novel materials combined with a simple, easily fabricated 'crossbar' ...
Electronics & Semiconductors
Jul 22, 2009
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Like the flutter of a butterfly's wings, sometimes small and minute changes can lead to big and unexpected results and changes in our lives. A team of researchers at Pohang University of Science and Technology (POSTECH) has ...
Nanophysics
Jun 27, 2024
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Scientists from the University of Lisbon (Portugal) and the University of Stuttgart (Germany) have managed to synthesize and extensively characterize a series of cobalt molecules that exhibit the properties of molecular magnets, ...
Analytical Chemistry
Jul 5, 2022
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Computers normally store and process data in separate modules. But now researchers at ETH Zurich and the Paul Scherrer Institute have developed a method that allows logical operations to be performed directly within a memory ...
Quantum Physics
Jun 16, 2020
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Researchers at the Center for Innovative Integrated Electronic Systems (CIES) at Tohoku University have successfully observed microscopic chemical bonding states in ultrathin MgO—an important determinant in STT-MRAM performance. ...
Materials Science
Aug 5, 2019
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A non-volatile memory keeping its digital information without power and working at the same time at the ultrahigh speed of today's dynamic random access memory (DRAM) – that is the dream of materials scientists of TU Darmstadt.
Nanophysics
Jul 12, 2017
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Scientists from MIPT have succeeded in growing ultra-thin (2.5-nanometre) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. ...
Condensed Matter
Apr 14, 2016
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