Taiwan engineers defeat limits of flash memory

(Phys.org)—Taiwan-based Macronix has found a solution for a weakness in flash memory fadeout. A limitation of flash memory is simply that eventually it cannot be used; the more cells in the memory chips are erased, the ...

IBM scientists demonstrate computer memory breakthrough

(PhysOrg.com) -- For the first time, scientists at IBM Research have demonstrated that a relatively new memory technology, known as phase-change memory (PCM), can reliably store multiple data bits per cell over extended periods ...

Scientists develop fatigue-free ferroelectric material

Researchers at the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences, in collaboration with research groups from the University of Electronic Science and Technology of China ...

Beyond flash -- memories are made of this

(PhysOrg.com) -- The race is on for a successor to the popular 'flash' memory used in portable devices. European researchers think they have found a candidate in novel materials combined with a simple, easily fabricated 'crossbar' ...

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