Tin sulfide (SnS) is an abundant, safe, and environmentally friendly solar cell material. This inexpensive material is forecast to be used in next-generation solar cell panels.
Materials Science
Dec 13, 2021
0
29
Gallium nitride (GaN) based devices are attractive for harsh environment electronics because of their high chemical and the mechanical stability of GaN itself that has a higher atomic displacement energy than other semiconductor ...
Electronics & Semiconductors
Dec 8, 2014
0
0
In conventional organic solar cells, the electrons exhibit their particle-nature and need to jump between organic molecules in the cell. The conductivity is, therefore, lower than that of crystalline silicon solar cells. ...
Materials Science
Apr 26, 2019
0
5
The ability to manipulate light on a subwavelength-scale could lead to a revolution in photonic devices such as antennas, solar panels, and even cloaking devices. Nanotechnology advances have made this possible through the ...
Optics & Photonics
Apr 17, 2019
0
11
A simple and non-destructive fabrication technique could aid the manufacture of more energy efficient two-dimensional (2-D) films needed to transform the electronics industry.
Nanomaterials
Nov 30, 2018
0
12
A group of scientists at the Hefei Institutes of Physical Sciences of the Chinese Academy of Sciences has developed new p-type (positive hole) near infrared (NIR) transparent conducting (TC) films with ultra-high conductivity, ...
Optics & Photonics
Jan 19, 2022
0
3
Tin monosulfide (SnS) is a promising material used for next-generation solar cells because of its nontoxic characteristics and abundance, in addition to its excellent photovoltaic properties. Sakiko Kawanishi and Issei Suzuki ...
Materials Science
Aug 21, 2020
0
5
Transparent electronics are the future, according to researchers including José A. Flores-Livas and Miglė Graužinytė from the research group headed by Stefan Goedecker, Professor of Computational Physics at the University ...
General Physics
Jan 22, 2019
0
6
Researchers at Tokyo Institute of Technology (Tokyo Tech) report on a unipolar n-type transistor with a breakthrough electron mobility performance of up to 7.16 cm2 V-1 s-1. This achievement heralds an exciting future for ...
Polymers
Mar 1, 2019
0
4
Prof. Zhang Yongsheng's research group at the Hefei Institutes of Physical Science of the Chinese Academy of Sciences has systematically investigated the thermoelectric (TE) properties of three pyrite-type IIB-VIA2 dichalcogenides ...
Condensed Matter
Aug 29, 2022
0
11
